Characterization of porous polar semiconductors by their optical spectra in the region of phonon and plasmon-phonon excitations

Abstract

Optical properties of porous A 3 B 5 semiconductors (GaAs, InP, and GaP) in the far infrared region, in particular, the specular reflection and attenuated total reflection, including the excitation regime of surface polaritons, are considered. Considering a porous material as a composite, we performed calcula tions in the context of the effective medium model using two modifications of it, Maxwell Garnett and Bruggeman, which correspond to two different topologies of the composite material-matrix and statistical. The effect of porosity of the material and of such parameters as doping, anisotropy, and penetration depth of an electromagnetic wave to a porous material on optical spectra is analyzed. In addition, some experimental data are presented and the adequacy of the performed numerical simulation is demonstrated.

Attenuated Total Reflection Studies of Honeycomb Nanoporous GaN Thin Films

“…The formation of nanoporous structure of GaN leads to the changes of its dielectric properties. The dielectric tensor components of nanoporous structure can be deduced from the effective medium theories [12,16]:…”

“…Very recently, Barlas et al [12] studied the SPP characteristics of III-V porous semiconductors (InP, GaP and GaAs). The results showed that the SPP resonance of porous structure is sensitive to the porosity, anisotropy, doping and phonon damping.…”