Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

Lee, S.C.; Ng, Sha Shiong; Yam, F.K.; Hassan, H. Abu; Hassan, Z.

doi:10.1016/j.jlumin.2014.11.028

Cited by 9 publications

(10 citation statements)

References 31 publications

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“…8 The NBE peak shows much lower intensity compared with the YL peak, which is likely from the low carrier concentration in undoped GaN. 28 Compared with planar GaN, the nanoridge GaN surface shows a much higher YL peak intensity. YL in undoped GaN is widely regarded to be from the complexes of gallium vacancies and oxygen substituting on the nitrogen site (V Ga − O N complexes).…”

Section: Resultsmentioning

confidence: 99%

“…Two major PL peaks locating at 360 and 560 nm can be assigned to near-band-edge emission (NBE) and yellow luminescence (YL), respectively . The NBE peak shows much lower intensity compared with the YL peak, which is likely from the low carrier concentration in undoped GaN . Compared with planar GaN, the nanoridge GaN surface shows a much higher YL peak intensity.…”

Section: Resultsmentioning

confidence: 99%

“…However, reports on wet etching of undoped GaN for device level applications have not yet been well studied. Although some groups have demonstrated a porous surface on undoped GaN, its electrical and optical properties were not studied. − There have been attempts to employ porous surface texturing on undoped GaN in UV photodetection, but they failed to achieve enhanced responsivity. For example, Guo et al utilized porous undoped GaN to detect 325 nm UV light.…”

Section: Introductionmentioning

confidence: 99%

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Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes

Liao

Kim

Lai

et al. 2023

ACS Appl. Mater. Interfaces

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Antireflective (AR) surface texturing is a feasible way to boost the light absorption of photosensitive materials and devices. As a plasma-free etching method, metal-assisted chemical etching (MacEtch) has been employed for fabricating GaN AR surface texturing. However, the poor etching efficiency of typical MacEtch hinders the demonstration of highly responsive photodetectors on an undoped GaN wafer. In addition, GaN MacEtch requires metal mask patterning by lithography, which leads to a huge processing complexity when the dimension of GaN AR nanostructure scales down to the submicron range. In this work, we have developed a facile texturing method of forming a GaN nanoridge surface on an undoped GaN thin film by a lithography-free submicron mask-patterning process via thermal dewetting of platinum. The nanoridge surface texturing effectively reduces the surface reflection in the ultraviolet (UV) regime, which can be translated to a 6-fold enhancement in responsivity (i.e., 115 A/W) of the photodiode at 365 nm. The results demonstrated in this work show that MacEtch can offer a viable route for enhanced UV light-matter interaction and surface engineering in GaN UV optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes

Liao

Kim

Lai

et al. 2023

ACS Appl. Mater. Interfaces

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“…In the work of Li et al, 82 nanoporous GaN was prepared electrodeless photoelectrochemical etching with HF and H 2 O 2 , and the blue-shifted emission band of nanoporous GaN was observed, Similar to GaN nanowires, the luminescence intensity of porous GaN formed by photoelectrochemical etching was also significantly increased. In the study of Cheah, 83 Instead of simply attributing the enhancement of luminescence intensity to the porous structure to the porous structure, the work claimed that the concentration of free carriers was the main factor for the enhancement of luminescence intensity. After photoelectrochemical etching, defects were can removed with the elimination of internal stress and the increase of surface volume ratio, red shift of the photoluminescence peak was observed in porous GaN that E-2 (high) peak shifted to low frequencies in the Raman spectrum.…”

Section: Electrochemical Etching Of Ganmentioning

confidence: 99%

Review—Progress in Electrochemical Etching of Third-Generation Semiconductors

Chen

et al. 2023

ECS J. Solid State Sci. Technol.

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Third-generation semiconductors have richer and better properties than traditional semiconductors, and show promising application prospects in high-power, high-temperature, high-frequency, and optoelectronic devices. Therefore, they have gained increasing interest and received extensive research attention in recent years. Electrochemical etching plays an important role in exploring the properties of third-generation semiconductors and related device fabrication. This paper systematically reviews the electrochemical etching process of silicon carbide and gallium nitride which are the typical representative of the third-generation semiconductors. Through subdividing the electrochemical etching approach into anodic oxidation etching, photoelectrochemical etching, and electroless photoelectrochemical etching, the mechanism of each electrochemical etching method is expounded, the influences of various etching parameters on the etching results are discussed, and the related applications of electrochemical etching in characterizing crystal defects, processing micro-nano structures, and fabricating microelectronic devices are summarized. Finally, future development in achieving more efficient electrochemical etching is briefly discussed. In general, this paper provides a systematic review of the electrochemical etching of third-generation semiconductors, which is helpful for researchers to supplement the content in this field, and even non-researchers in this field will be able to familiarize themselves with the relevant content quickly.

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“…The electrochemical conditions including applied bias and electrolyte solutions have been investigated with regard to the formation of GaN porous structures. 21) Thus far, however, the controllability of structural properties such as the pore diameter and depth has been inadequate. 22,23) One reason for the difficulty in structural control is that a photoassisted electrochemical process is commonly used, and this formation process becomes more complicated as the illumination generates a supply of photocarriers.…”

Section: Introductionmentioning

confidence: 99%

Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching

Kumazaki

Yatabe

Sato

2016

Jpn. J. Appl. Phys.

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We aimed to develop a photoassisted electrochemical etching process for the formation of GaN porous structures. Pore linearity and depth controllability were strongly affected by the anode voltage. In addition, the use of light with an energy below the band gap played an important role in controlling the pore diameter. Spectro-electrochemical measurements revealed that the high electric field induced at the GaN/electrolyte interface caused a redshift of the photoabsorption edge. This specific phenomenon can be explained by a theoretical calculation based on the Franz-Keldysh effect. On the basis of the results of our experimental and theoretical analyze, we propose a formation model for GaN porous structures. We also note that the application of the Franz-Keldysh effect is useful in controlling the structural properties of GaN porous structures.

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Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

Cited by 9 publications

References 31 publications

Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes

Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes

Review—Progress in Electrochemical Etching of Third-Generation Semiconductors

Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching

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