Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing

Okada, Narihito; Inomata, Yuki; Ikeuchi, Hiroki; Fujimoto, Shinsaku; Itakura, Hideyuki; Nakashima, Satoru; Kawamura, Rei; Tadatomo, Kazuyuki

doi:10.1016/j.jcrysgro.2019.02.016

Cited by 6 publications

(4 citation statements)

References 25 publications

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“…In In 0.3 Ga 0.7 N, there is an additional peak at 67.3 • which belongs to the GaN structure with respect to that of InN (JCPDS Card No: 00-050-0792). It refers to the phase separation that is only found in this composition [20]. The broadening of the peaks might arise from several factors such as the distribution of bond lengths for a random alloy size-dependent broadening, the large size of the X-ray beam spot across the composition gradient and the inhomogeneity of the ternary In x Ga 1−x N alloys [21].…”

Section: Preparation Of Bulk Buffer Gan Alloymentioning

confidence: 99%

Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices

et al. 2019

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In this study, we investigated an innovative method for the fabrication of nanostructure bulk alloys and thin films of indium gallium nitride (InxGa1-xN) as active, thin films for light-emitting diode (LED) devices using both crystal growth and thermal vacuum evaporation techniques, respectively. These methods resulted in some tangible improvements upon the usual techniques of InxGa1-xN systems. A cheap glass substrate was used for the fabrication of the LED devices instead of sapphire. Indium (In) and Gallium (Ga) metals, and ammonia (NH3) were the precursors for the alloy formation. The alloys were prepared at different growth temperatures with compositions ranging from 0.1≤x≤0.9. InxGa1-xN alloys at 0.1≤x≤0.9 had different crystallinities with respect to X-Ray diffraction (XRD) patterns where the energy bandgap that was measured by photoluminescence (PL) fell in the range between 1.3 and 2.5 eV. The bulk alloys were utilized to deposit the thin films onto the glass substrate using thermal vacuum evaporation (TVE). The XRD thin films that were prepared by TVE showed high crystallinity of cubic and hexagonal structures with high homogeneity. Using TVE, the InxGa1-xN phase separation of 0.1≤x≤0.9 was eliminated and highly detected by XRD and FESEM. Also, the Raman spectroscopy confirmed the structure that was detected by XRD. The FESEM showed a variance in the grain size of both alloys and thin films. The InxGa1-xN LED device with the structure of glass/GaN/n-In0.1Ga0.9N:n/In0.1Ga0.9N/p-In0.1Ga0.9N:Mg was checked by the light emitted by electroluminescence (EL). White light generation is a promising new direction for the fabrication of such devices based on InxGa1-xN LED devices with simple and low-cost techniques.

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Section: Preparation Of Bulk Buffer Gan Alloymentioning

confidence: 99%

Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices

et al. 2019

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“…In a previous study, we successfully fabricated a fully relaxed thick c-plane InGaN template using a facet structure with the highest In composition of approximately 7%. 19) However, the device fabrication process using this InGaN template faced limitations owing to the groove problem in the facet structure. Therefore, we employed the stable {1122} plane for the InGaN template to achieve a flat surface and high In content.…”

Section: Introductionmentioning

confidence: 99%

Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer

tawarazako

nishi

nakata

et al. 2022

Jpn. J. Appl. Phys.

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In this study, we report a high In composition {11-22} InGaN underlayer grown on an m-plane sapphire substrate and the multi-quantum wells (MQWs) grown on it. The InGaN template with high In composition (In:~18%) was fully relaxed. The MQWs photoluminescence (PL) spectrum on the InGaN underlayer exhibited a higher emission intensity and a longer emission wavelength compared with that on a GaN template. Additionally, when the InGaN underlayer was adopted, an InGaN barrier was more suitable than a GaN barrier for the long-wavelength (red) region; the PL spectrum of InGaN/InGaN MQWs was twice as high as that of InGaN/GaN MQWs in the red emission region. Finally, we investigated the optical polarization of the MQWs on {11-22} InGaN underlayers and discussed its characteristics using theoretical equations.

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“…2 Nevertheless, the state of lattice defects on substrate surface has measurable influence on the characteristics of mounted electronic components. 3 Additionally, next-generation wide gap semiconductor substrates, such as typical hard-to-process materials SiC 3,4 and GaN, 5,6 take exceedingly long time in finishing process to obtain smooth surface with high precision at high efficiency. [5][6][7] CMP process can remove the surface defects and subsurface damage, 1,8 and realize high material removal rate under suitable conditions.…”

mentioning

confidence: 99%

“…3 Additionally, next-generation wide gap semiconductor substrates, such as typical hard-to-process materials SiC 3,4 and GaN, 5,6 take exceedingly long time in finishing process to obtain smooth surface with high precision at high efficiency. [5][6][7] CMP process can remove the surface defects and subsurface damage, 1,8 and realize high material removal rate under suitable conditions. Consequently, CMP process plays an extremely important role during semiconductor processing technologies, and is receiving much more attentions.…”

mentioning

confidence: 99%

Hybrid Effect Study of Pad-Conditioning/Slurry-Supply by High-Pressure-Micro-Jet (HPMJ) Method during CMP Process

Wang

Doi

Miyachi³

et al. 2020

ECS J. Solid State Sci. Technol.

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Surface clogging of polishing pad is inevitable during CMP (Chemical Mechanical Polishing) process of semiconductor wafers. In this paper, a novel slurry-feeding system utilizing HPMJ (High Pressure Micro Jet) apparatus was presented as in situ conditioning for CMP process. Clogging of pad surface can be greatly removed; the surface damage of polishing pad can also be extremely reduced by this new method. The experimental results exhibited that the material remove rate (MRR) of HPMJ method was almost constant value 100 μm h−1. However, the MRR value of conventional slurry-dripping method was about 50 μm h−1. On the other hand, surface roughness Ra changed both in hybrid HPMJ method and conventional slurry-dripping method after long-time continuous CMP process, the average Ra of hybrid HPMJ method was about 30% smaller than that of conventional slurry-dripping method, indicating that better surface quality could be obtained by HPMJ method polishing. It was demonstrated that HPMJ method showed higher MRR and lower surface roughness Ra for polishing process. HPMJ hybrid system mentioned in this study can also be applied to the polishing process of hard-to-process wide bandgap semiconductor substrate materials, such as SiC or GaN.

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Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing

Cited by 6 publications

References 25 publications

Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices

Synthesis of Nanostructure InxGa1−xN Bulk Alloys and Thin Films for LED Devices

Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer

Hybrid Effect Study of Pad-Conditioning/Slurry-Supply by High-Pressure-Micro-Jet (HPMJ) Method during CMP Process

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