In order for wide bandgap semiconductor power devices to be practical use in various power electronics applications, a 2in1 600V75A power package with a 200 degree Celsius heat resistance was newly developed on the premise of mass production. This package designed to specify a low inductance of less than 24nH enables SiC and GaN-based devices to be driven with a high slew rate up to 5kA/us under hard-switching condition. Furthermore, this package encapsulated by a epoxy resin of a high heat resistance and equipped with thick Cu heat spreader allow these power devices to be driven up to 200 degree Celsius and dissipate heat in large quantities (thermal resistance Rth,jc: 0.6K/W), which is found to make cooling heat sink simplified. We introduced 50ASiC-MOSFET in this package, and verified the operation on a power conditioner for Solar Photovoltaic cells up to 4kW output. A high power conversion efficiency of 97.7% was measured by our SiC power packages on downsized cooling heat sink in 1/4 volume, which was more efficient than Si-IGBT module by 1.5%.
The effect of the off-angle of a stripe pattern on the stability of the facet structure of epitaxially grown GaN was investigated using SiO2 masks with 210 μm periods, applying selective area growth through hydride vapor phase epitaxy. The SiO2 stripe pattern was rotated in steps over the range of 0°–30° to investigate the off-angle effect based on the a-axis of GaN. A triangular facet was formed at an off-angle of 0°; however, when the off-angle exceeded 1°, a trapezoidal facet was formed. Flat and stable {10-1×} facets without macro-steps was formed at the off-angle of 0°, resulting in the perfect triangular facet structure. Conversely, when the off-angle is 1° or greater, macro-steps were formed on the {10-11} sidewall facet, and the number of macro-steps on the sidewall facets on the trapezoidal structure increased as the off-angle increased, resulting in enhanced lateral growth and embedding.
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