2008
DOI: 10.4028/www.scientific.net/msf.600-603.333
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Characterization of Dislocations and Micropipes in 4H n<sup>+</sup> SiC Substrates

Abstract: Etching of 4H-SiC wafers in molten KOH as a method for micropipe and dislocation density analysis was investigated. The obtained results were correlated with those of the synchrotron white beam x-ray topography. Heavily nitrogen-doped SiC shows a significantly different etching behavior in comparison with the low-doped material. This complicates identification of different types of threading defects. In particular, it is difficult to separate Threading Screw Dislocations (TSD) from Threading Edge Dislocations … Show more

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Cited by 17 publications
(16 citation statements)
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“…4). These observations coincide with the reports of Wu [7], Wu et al [8] and Gao et al [3]. Consequently, the strain field criterion fails for n-type substrates because a broad continuous distribution of etch pit sizes occurs independent of Burgers vector size and strain field.…”
Section: Discussion Of the Etching Behaviour Of N-and P-type 4h-sicsupporting
confidence: 89%
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“…4). These observations coincide with the reports of Wu [7], Wu et al [8] and Gao et al [3]. Consequently, the strain field criterion fails for n-type substrates because a broad continuous distribution of etch pit sizes occurs independent of Burgers vector size and strain field.…”
Section: Discussion Of the Etching Behaviour Of N-and P-type 4h-sicsupporting
confidence: 89%
“…Consequently, the strain field criterion fails for n-type substrates because a broad continuous distribution of etch pit sizes occurs independent of Burgers vector size and strain field. The decoration criterion proposed by Wu et al [8] fits the experimental observations for substrates. The dependence of the overall etch pit sizes on the Fermi level of the samples was proven experimentally by Gao et al [3] for an initial ntype substrate, which was overcompensated to p-type by diffusion of boron.…”
Section: Discussion Of the Etching Behaviour Of N-and P-type 4h-sicmentioning
confidence: 50%
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