Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique

Puzzilli, Giuseppina; Govoreanu, B.; Irrera, Fernanda; Rosmeulen, M.; Houdt, J. Van

doi:10.1016/j.microrel.2007.01.040

Cited by 36 publications

(21 citation statements)

References 5 publications

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“…A hysteresis phenomenon was observed in both n-and p-type capacitors when the gate voltage (V G ) reaches 1.5 V. However, for the p-type sample, the hysterical behavior can be avoided and the whole C-V curve measured (curve 1 in the figure), if V G is lower than 0.5 V. This hysteresis is interpreted to be the result of trapping/detrapping along the C-V cycle of electrons tunneling from/to the semiconductor into preexisting defects within the insulator. 11,[20][21][22] These defects are more easily filled at higher V G for this causes more oxide traps to lie below the Fermi level, as shown in the inset of Fig. 1.…”

Section: A Electrical Characterizationmentioning

confidence: 96%

“…17-19. Voltage instabilities in Al 2 O 3 -based devices under normal operating conditions were observed and identified as electron trapping/detrapping by tunneling transitions from/to the substrate. 11,[20][21][22] This voltage instability makes it difficult to characterize the radiation response, because it superimposes to the radiation effects, as described by Felix et al for hafnium silicate (Hf x O y Si z ). 23 In a previous work, we characterized and modeled the electron traps that give place to these voltage instabilities.…”

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confidence: 99%

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Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Salomone

Kasulin

Lipovetzky

et al. 2014

Journal of Applied Physics

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Articles you may be interested inAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors Charge trapping analysis of Al2O3 films deposited by atomic layer deposition using H2O or O3 as oxidant J. Vac. Sci. Technol. B 31, 01A101 (2013); 10.1116/1.4766182Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs

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Section: A Electrical Characterizationmentioning

confidence: 96%

mentioning

confidence: 99%

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Salomone

Kasulin

Lipovetzky

et al. 2014

Journal of Applied Physics

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“…Prior to this paper, many novel measurement approaches were proposed for the next generation Flash memory since 2005 [60,61,62,63,64,65,66,67,68]. Various significant findings related to traps within the gate oxides were also reported [69,70,71,72].…”

Section: Introductionmentioning

confidence: 99%

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Zhao

et al. 2014

Materials

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Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future.

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“…Therefore, the group of rareearth or lanthanide oxides is rated as the top contender for this "final" high-k material. [21][22][23][24] The pulsed C-V is devoted to study phenomena occurring at extremely short times since it takes only a few hundreds of microseconds. The total distribution of defects is crucial since, as is well known, in high-k dielectrics it is far higher than SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Trapping in GdSiO high-k films

Rao

Simoncini

Gottlob

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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In this article, the authors systematically characterized TiN/GdSiO/ SiO 2 /Si metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage with the pulsed capacitance-voltage (C-V) technique, in condition of injection from gate and substrate. As a result, a bell shaped curve of the flatband shift versus trapping time was found, with a turn-around at 100-200 μs. This was explained as the concomitant of transient phenomena due to a charge of opposite polarity starting from the two different interfaces of the high- k film. This study was possible only because of the pulsed C-V technique. At long times, trapping has always shown a logarithmic trend and the kinetics of trapping is linearly dependent on the applied voltage. Finally, dc and pulsed stress were performed at voltages of interest for logic applications. © 2011 American Vacuum Society

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Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C–V technique

Cited by 36 publications

References 5 publications

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

Trapping in GdSiO high-k films

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