Trapping in GdSiO high-k films

Abstract

In this article, the authors systematically characterized TiN/GdSiO/ SiO 2 /Si metal oxide semiconductor capacitors from the point of view of charge trapping. Charge trapping was investigated measuring the flatband voltage with the pulsed capacitance-voltage (C-V) technique, in condition of injection from gate and substrate. As a result, a bell shaped curve of the flatband shift versus trapping time was found, with a turn-around at 100-200 μs. This was explained as the concomitant of transient phenomena due to a charge of opposite polarity starting from the two different interfaces of the high- k film. This study was possible only because of the pulsed C-V technique. At long times, trapping has always shown a logarithmic trend and the kinetics of trapping is linearly dependent on the applied voltage. Finally, dc and pulsed stress were performed at voltages of interest for logic applications. © 2011 American Vacuum Society

Model of Reversible Breakdown in HfO2Based on Fractal Patterns

“…When the new defect is generated the procedure goes to the next step; otherwise another iteration is performed (step 4 in Figure 2). Generation only at metal interfaces is considered since, in general, defectiveness at interfaces is increased with respect to bulk [23][24][25][26]. The position of the newly generated defect (i.e., the column of the matrix) follows a discrete probability distribution ( , = 1 to ) which is related to the electric field in that column through the relation [21,27]:…”

Advanced methodology for electrical characterization of metal/high-k interfaces

“…Conventional steady-state capacitance or current techniques require measurement times on a second/ minute timescale, during which transient phenomena related to electrons may have exhausted. To overcome the problem, new experimental techniques have been proposed in the last few years to monitor electrical transients at short timescales [13][14][15][16][17][18][19][20][21][22][23][24][25] and, in few cases, they have been used for qualitative investigation of M/HK systems. [13][14][15][16][17] In this paper, we propose a methodology for quantitative electrical characterization of M/HK interfaces.…”

“…To overcome the problem, new experimental techniques have been proposed in the last few years to monitor electrical transients at short timescales [13][14][15][16][17][18][19][20][21][22][23][24][25] and, in few cases, they have been used for qualitative investigation of M/HK systems. [13][14][15][16][17] In this paper, we propose a methodology for quantitative electrical characterization of M/HK interfaces. The proposed methodology includes modelling of trapping in the oxide, measurements of flat band voltage at extremely short times, fit of experimental data, and calculation of the band diagram after trapping.…”

Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes

“…Previous studies performed with the pulsed C-V technique on TiN/Al 2 O 3 , TaN/Al 2 O 3 , TiN/GdSiO, and TaN/ Al-ZrO 2 systems already put in evidence the effect of trapping transients on the stability of V FB and outlined the entity of the problem. 24,[29][30][31]…”