Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

Efficient Incorporation of Mg in Solution Grown GaN Crystals

“…10) Previous studies of self-nucleated crystals indicate that these crystals have an X-ray rocking curve full width at half maximum (FWHM) similar to that of Ammonothermal crystals, record small FWHM of the first-order allowed optical phonons, and relatively low room temperature (RT) free carrier concentrations. 11,12) The samples used in this experiment were grown in a custom-designed reactor incorporated in a vertical tube furnace. A multi-component solvent was employed to dissolve the GaN source and subsequently grow single crystal GaN from the solution.…”

Point Defects in GaN

“…A similar PL band is the dominant band in GaN grown from solution (Garces et al, 2010). The GL band emerges only at high excitation intensity, when the YL and RL bands saturate (Fig.…”

“…Bulk HNP GaN contains oxygen with the concentration exceeding $10 19 cm À3 (Leszczynski et al, 1996;Tuomisto et al, 2005). In GaN grown from solution at $800°C and near atmospheric pressure, the concentrations of the O, Si, C, and H impurities are near or below their detection limits of 5 Â 10 16 , 5Â 10 15 , 8Â 10 15 , and 2 Â 10 17 cm À3 , respectively (Garces et al, 2010).…”

Defect-Related Luminescence in Undoped GaN Grown by HVPE

“…The most common defect-related PL band in high-purity GaN templates is the green luminescence (GL) band with a maximum at about 2.4 eV at low temperatures [5][6][7][8][9]. The GL band is also strong in bulk GaN grown from solution [10,11]. In different undoped GaN layers grown by HVPE, other defect-related PL bands include the red luminescence (RL) band with a maximum at 1.8 eV [9,[13][14][15], the yellow luminescence (YL) band at 2.2 eV [5,8,9,14], the blue luminescence (BL) band at 2.9 eV [14,16], and the ultraviolet luminescence (UVL) band with the main peak at 3.26 eV [5,13,16,17].…”