Point Defects in GaN

Reshchikov, M. A.

doi:10.1016/bs.semsem.2014.11.003

Cited by 15 publications

(6 citation statements)

References 130 publications

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“…In particular, it has been established that the YL band in sample EM1256 is quenched at temperatures above 450 K with an activation energy of 0.85 eV. It also appears that the YL center is the same defect as the H1 trap identified by capacitance techniques [20].…”

Section: Fine Structure Of the Yl Bandmentioning

confidence: 97%

“…Indeed, PL intensity is proportional to the concentration of associated defects only for low concentrations of the defects, often below the detection limit of SIMS measurements for impurities. For example, the absolute quantum efficiency of the Zn-related blue luminescence in undoped and Zn-doped GaN increases linearly with the concentration of Zn atoms and reaches 30% for [Zn] ≈ 10 16 cm -3 [20]. At higher concentrations of Zn atoms, the quantum efficiency approaches 100% for some samples or stays at 30% for others, apparently due to the uncontrolled incorporation of nonradiative defects.…”

Section: Ga and V Ga Complexesmentioning

confidence: 99%

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Zero-phonon line and fine structure of the yellow luminescence band in GaN

et al. 2016

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The yellow luminescence band was studied in undoped and Si-doped GaN samples by steady-state and time-resolved photoluminescence. At low temperature (18 K), the zerophonon line (ZPL) for the yellow band is observed at 2.57 eV and attributed to electron transitions from a shallow donor to a deep-level defect. At higher temperatures, the ZPL at 2.59 eV emerges, which is attributed to electron transitions from the conduction band to the same defect. In addition to the ZPL, a set of phonon replicas is observed, which is caused by the emission of phonons with energies of 39.5 meV and 91.5 meV. The defect is called the YL1 center. The possible identity of the YL1 center is discussed. The results indicate that the same defect is responsible for the strong YL1 band in undoped and Si-doped GaN samples.

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Section: Fine Structure Of the Yl Bandmentioning

confidence: 97%

Section: Ga and V Ga Complexesmentioning

confidence: 99%

Zero-phonon line and fine structure of the yellow luminescence band in GaN

et al. 2016

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“…Sometimes it is concluded that two different defects contribute to the YL band because the temperature dependences of the YL intensity in two samples are very different. [36,100] However, a simpler explanation can be suggested (Section 3.7). [102] Further, the position of the YL1 band may not be the same in various samples because of the measurement conditions, the presence of strain or local electric fields (Section 3.6.2), or because the asmeasured PL spectra are not corrected or corrected using different approaches.…”

Section: Controversies About the Yl Band Identitymentioning

confidence: 99%

“…From the analysis of a large set of GaN samples we determined C p ¼ (3.5 AE 1.5) Â 10 À7 cm 3 s À1 for the YL1 band at temperatures between 100 and 500 K. [1,2,86] A similar value was obtained from deep-level transient spectroscopy (DLTS) studies, where the H1 trap in MOCVD GaN was linked to the YL1 band and attributed to the C N acceptor. [100,101] Note that Equation ( 8) is valid for relatively low P exc , when defects are not saturated with photogenerated holes. Using this equation to fit the PL data obtained at high P exc may lead to incorrect parameters (unreasonably small E A and C p ).…”

Section: Pl Quenching In N-type Ganmentioning

confidence: 99%

On the Origin of the Yellow Luminescence Band in GaN

Reshchikov

2022

Physica Status Solidi (b)

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The yellow luminescence (YL) band with a maximum at 2.2 eV is the dominant defect‐related luminescence in unintentionally doped GaN. The discovery of the mechanism responsible for this luminescence band and related defects in GaN took many years. Eventually, a consensus has been reached that the CN acceptor is the source of the YL band (the YL1 band) in GaN samples grown by several techniques. Previously suggested candidates, such as VGa, VGaON, CNON, and CNSiGa, should be discarded. At the same time, other defects (such as the VN, BeGa, and CaGa) may cause luminescence bands with positions and shapes not much different from the YL1 band. In GaN containing high concentrations of gallium vacancies, oxygen, and hydrogen, complexes containing these species may also contribute in the red–yellow part of the photoluminescence spectrum. The main controversies related to the YL band are resolved.

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“…Similar to extrinsic emission, SRH recombination arises because of the presence of defects such as surfaces, dislocations and point defects. These introduce localised trap states within the band gap [51, 52]. An electron can be trapped at a localised defect state and recombine with a hole in the valence band releasing a phonon.…”

Section: Optical Properties Of Semiconductors and Carrier Diffusionmentioning

confidence: 99%

Uncovering the carrier dynamics of AlInGaN semiconductors using time-resolved cathodoluminescence

Loeto

2022

Materials Science and Technology

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The III-nitride family of semiconductors has proved essential in the design of important optoelectronic technology such as light-emitting diodes (LEDs). To improve our understanding of these materials and their devices it is important to unravel the mysteries of their carrier dynamics. Time-resolved cathodoluminescence (TRCL) is a characterisation technique wherein a pulsed electron beam is used to excite charge carriers in semiconductors. By analysis of the recorded datasets, deductions can be made about the activity of carriers in the period between their generation and recombination. The purpose of this review is to summarise work done on the use of TRCL in the understanding of III-nitride based materials and devices. The focus will be on quantum well LEDs and structural defect-related recombination.

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Point Defects in GaN

Cited by 15 publications

References 130 publications

Zero-phonon line and fine structure of the yellow luminescence band in GaN

Zero-phonon line and fine structure of the yellow luminescence band in GaN

On the Origin of the Yellow Luminescence Band in GaN

Uncovering the carrier dynamics of AlInGaN semiconductors using time-resolved cathodoluminescence

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