Defect-Related Luminescence in Undoped GaN Grown by HVPE

Reshchikov, M. A.; Usikov, A.; Helava, H.; Makarov, Yu.N.

doi:10.1007/s11664-014-3540-4

Cited by 3 publications

(3 citation statements)

References 26 publications

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“…Similar broad peaks at about 2.4 eV have been sometimes observed by other groups for HVPE-grown samples. 37,38) These peaks are referred to as "green luminescence" (GL). The absence of the BL peak and the difference in the peak positions between YL and GL indicate that the sources and natures of the deep levels present in each crystal are totally different.…”

Section: Si-doping Characteristics Of High-purity Gan Layers Fabricat...mentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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Section: Si-doping Characteristics Of High-purity Gan Layers Fabricat...mentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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“…In another study, hydride vapor phase epitaxy (HVPE) was utilized to grow low-defect GaN . The undoped films were grown on sapphire and was subsequently subjected to steady-state and time-resolved PL analysis.…”

Section: Low-temperature Luminescencementioning

confidence: 99%

“…In another study, hydride vapor phase epitaxy (HVPE) was utilized to grow low-defect GaN. 120 The undoped films were grown on sapphire and was subsequently subjected to steadystate and time-resolved PL analysis. One of the observed dominant PL bands in high-quality GaN grown by HVPE was the green luminescence (GL) band, with a maximum at 2.4 eV.…”

Section: ■ Total Luminescence and Synchronousmentioning

confidence: 99%

Fluorescence, Phosphorescence, and Chemiluminescence

et al. 2015

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Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

Xie

Sui

Buckeridge

et al. 2018

Applied Physics Letters

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Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect complex in GaN. The formation energy of the gallium vacancy is largely reduced in n-type GaN by complexing with oxygen, while thermodynamic and optical transition levels remain within the band gap. We study the spectroscopy of this complex using a hybrid quantum-mechanical molecular-mechanical (QM/MM) embedded-crystal approach. We reveal how a single defect center can be responsible for multiband luminescence, including the ubiquitous yellow luminescence signature observed in n-type GaN, owing to the coexistence of diffuse (extended) and compact (localized) holes.

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Defect-Related Luminescence in Undoped GaN Grown by HVPE

Cited by 3 publications

References 26 publications

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fluorescence, Phosphorescence, and Chemiluminescence

Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

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