Characterization of 3D Dopant Distribution in State of the Art FinFET Structures

Hatzistergos, Michael; Hopstaken, M.; Kim, E.; Vanamurthy, Lakshmanan; Shaffer, JJ

doi:10.1017/s143192761300679x

Cited by 4 publications

(4 citation statements)

References 4 publications

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“…The tolerance in fin width has been calculated to about 1 nm for industry acceptable variability in electrical parameters for 20 nm finFETs and a tolerance of 10–15% for variations in gate length (Shiying & Bokor, 2003). Further, diffusion of dopants into the Si channel can cause large changes in the electronic density, known as random density fluctuations; these are an important part of current experimental and computational studies (Pei et al, 2002; Bernstein et al, 2006; Baravelli et al, 2008; Wang et al, 2011). A failed device could hence differ from a working device based on small structural or concentration fluctuations.…”

Section: Discussionmentioning

confidence: 99%

“…Very recently, correlative microscopy with APT and transmission electron microscopy (TEM) on 30 nm static random access memory (SRAM) planar transistors with Ni-Si contacts has also been shown (Panciera et al, 2013). Boron profiles for 14 nm fins were reported by Hatzistergos et al (2013) albeit on samples specifically prepared for APT.…”

Section: Introductionmentioning

confidence: 99%

“…Soft defects occurring due to dielectric breakdown, process variations, and resistive interconnects are more often attributed to structural defects at the atomic level. Specifically, line-edge roughness and fin thickness variations can affect the threshold voltage and sub threshold slope (Pei et al, 2002; Baravelli et al, 2008), both important electrical parameters for low power devices. Variations in the oxide layer thickness can give rise to larger tunneling currents (Bernstein et al, 2006), while discrete impurity atoms in the channel can significantly affect the current density in the channel (Wang et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

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Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

et al. 2017

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The semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy-energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

et al. 2017

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“…Their atom probe results clearly showed the silicide contacts, polysilicon gates, and TiN capping. In the same year, Hatzistergos et al [205] from IBM reported on APT of 14 nm FinFET devices, albeit without any site specificity. They reasoned that the small size of the transistor, which followed a repeated array in two dimensions, would ensure that any tip contained at least one transistor.…”

Section: Atomic-scale Dopant Distribution In Semiconductor Devicesmentioning

confidence: 99%

Three-dimensional nanoscale characterisation of materials by atom probe tomography

Devaraj

Perea

Liu

et al. 2017

International Materials Reviews

136

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The development of three-dimensional (3-D), characterisation techniques with high spatial and mass resolution is crucial for understanding and developing advanced materials for many engineering applications as well as for understanding natural materials. In recent decades, atom probe tomography (APT), which combines a point projection microscope and time-offlight mass spectrometer, has evolved to be an excellent characterisation technique capable of providing 3-D nanoscale characterisation of materials with sub-nanometer scale spatial resolution, with equal sensitivity for all elements. This review discusses the current state, as of APT instrumentation, new developments in sample preparation methods, experimental procedures for different material classes, reconstruction of APT results, the current status of correlative microscopy, and application of APT for microstructural characterisation in established scientific areas like structural materials as well as new applications in semiconducting nanowires, semiconductor devices, battery materials, catalyst materials, geological materials, and biological materials. Finally, a brief perspective is given regarding the future of APT.

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Dopant, composition and carrier profiling for 3D structures

Vandervorst

Fleischmann

Bogdanowicz

et al. 2017

Materials Science in Semiconductor Processing

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Characterization of 3D Dopant Distribution in State of the Art FinFET Structures

Abstract: Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Cited by 4 publications

References 4 publications

Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

Three-dimensional nanoscale characterisation of materials by atom probe tomography

Dopant, composition and carrier profiling for 3D structures

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