Characteristics of single crystalline AlN films grown on Ru(0001) substrates

Inoue, Shigeru; Okamoto, K.; Nakano, Takayuki; Fujioka, Hiroshi

doi:10.1016/j.jcrysgro.2006.09.051

Cited by 10 publications

(9 citation statements)

References 21 publications

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“…Many efforts have been done to know how the nucleation and growth mechanism of preferred orientation AlN films are affected by sputtering parameters [8][9][10]. In addition, not only the sputtering parameters, but also the nature of substrates has a vital role in the determination of crystalline and orientation [11][12].…”

Section: Introductionmentioning

confidence: 99%

Influence of substrate metals on the crystal growth of AlN films

Xiong

et al. 2010

Int J Miner Metall Mater

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AlN films were deposited by reactive radio frequency (RF) sputtering on various bottom electrodes, such as Al, Ti, Mo, Au/Ti, and Pt/Ti. The effects of substrate metals on the orientation of AlN thin films were investigated. The results of X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy show that the orientation of AlN films depends on the kinds of substrate metals evidently. The differences of AlN films deposited on various metal electrodes are attributed to the differences in lattice mismatch and thermal expansion coefficient between the AlN material and substrate metals. The AlN film deposited on the Pt/Ti electrode reveals highly the c-axis orientation with well-textured columnar structure. The positive role of the Pt/Ti electrode in achieving the high-quality AlN films and high-performance film bulk acoustic resonator (FBAR) may be attributed to the smaller lattice mismatch as well as the similarity of thermal expansion coefficient between the deposited AlN material and the Pt/Ti electrode substrate.

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Section: Introductionmentioning

confidence: 99%

Influence of substrate metals on the crystal growth of AlN films

Xiong

et al. 2010

Int J Miner Metall Mater

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“…In These results are in striking contrast to that grown at lower temperature of 500 1C with sharp and streaky RHEED patterns, very smooth surface with a RMS surface roughness of 1.5 nm, and a very thin interfacial layer of about 0.9 nm, as shown in Figs. 39(c) and (d), and 40 [122]. There is no interfacial layer when AlN films are grown at 400 1C, as shown in Fig.…”

Section: Group Iii-nitride Films On Ru and Ta Substrates By Pldmentioning

confidence: 83%

“…Ru has a high density and large Young's modulus [121], and therefore can improve rejection level at the pole of III-nitride devices' characteristics by the use of Ru electrodes [122]. In These results are in striking contrast to that grown at lower temperature of 500 1C with sharp and streaky RHEED patterns, very smooth surface with a RMS surface roughness of 1.5 nm, and a very thin interfacial layer of about 0.9 nm, as shown in Figs.…”

Section: Group Iii-nitride Films On Ru and Ta Substrates By Pldmentioning

confidence: 99%

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Wang

Yang

et al. 2015

Surface Science Reports

127

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“…The materials considered in this calculation are Mo, Ru, Rh, W and TiN. Mo and Ru are widely used as an electrode for FEARs [6][7][8][9]. The material parameters are shown in Table 1.…”

Section: Materials Of Electrodesmentioning

confidence: 99%

Application of Film Bulk Acoustic Wave Resonator for Sensitive Mass Sensor

Tanaka¹,

Fujita²,

Kurisu³

et al. 2008

Trans. Mat. Res. Soc. Japan

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Film Bulk Acoustic wave Resonator (FBAR) is one of the band pass filters employed for high frequency devices. In order to apply FBARs to sensitive mass sensor, quality factor defined by the ratio of the resonance frequency to the full width at half maximum for the frequency characteristics is required to be large. In this study, operating characteristic for the FBAR was analyzed using the commercialized software Ansys (Ansys Inc.) which solves electric field-structure coupled problems using a 3 dimensional finite element method. A change in resonance frequency for the FBAR due to additional weight was confirmed by the simulation, and the FBAR was estimated to show the 10 Hz of the change in the resonance frequency for 2 GHz band operation when 2 pg of additional weight was loaded. Thereby the FBAR was considered to work as a sensitive mass sensor. The electrode materials were found to affect quality factor, and the highest quality factor was also found to be obtained when the electrode is TiN compared with Mo, Ru, Rh and W.

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Characteristics of single crystalline AlN films grown on Ru(0001) substrates

Cited by 10 publications

References 21 publications

Influence of substrate metals on the crystal growth of AlN films

Influence of substrate metals on the crystal growth of AlN films

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

Application of Film Bulk Acoustic Wave Resonator for Sensitive Mass Sensor

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