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GaN films have been grown on highly thermally conducting Ag(111) substrates by using pulsed laser deposition. GaN(0001) grows epitaxially on Ag(111) with an in-plane epitaxial relationship of GaN[112¯0]‖Ag[11¯0] when low temperature AlN buffer layers are used. The heterointerfaces in the AlN∕Ag structure are atomically abrupt, and that the abruptness remains unchanged during annealing up to 700°C for the GaN growth. Neither 30° rotational domains nor cubic phase domains exist in the GaN films. It has been also confirmed that the GaN films grown on the Ag substrate exhibit strong near band edge photoluminescence emission at 3.51eV. These results indicate that the epitaxial growth of GaN on mirror-polished single crystalline Ag substrates possibly improve the power limits and the light extraction efficiency of future light-emitting devices.
In order to achieve a sufficiently high volume fraction and the preferred alignment of long carbon nanotubes (CNTs), CNT spun yarns were used as preforms for fabricating epoxy-based composite materials with excellent mechanical properties using the pultrusion technique. Epoxy resin was well impregnated into the preforms, resulting in better load transfer from the resin to the CNTs. By using CNT spun yarn as the preform, the Young's modulus and tensile strength were improved by up to 15 times and 7 times over those of the epoxy resin, respectively. SEM observation suggested that the dominant fracture mode of the composite was fiber breakage of the CNTs.
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