Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

Park, Dae-Gyu; Cho, Heung-Jae; Lim, Kwan-Yong; Lim, Cheol Hee; Yeo, In‐Seok; Roh, Jae–Sung; Park, Jin Won

doi:10.1063/1.1368869

Cited by 79 publications

(15 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Based on this model, (C S + C it )~C ox /3. As the semiconductor capacitance is negligible in the deep-subthreshold region, the interface trap density is D it~2 .6×10 11 eV − 1 cm − 2 , a very low value indeed 12 . The SS value was measured to be ~24 mV per decade at 77 K, indicating D it does not vary with temperature.…”

Section: Resultsmentioning

confidence: 96%

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

et al. 2012

View full text Add to dashboard Cite

unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of processfriendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities ( > 100 cm 2 V − 1 s − 1 ), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on shockley's long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of highresolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.

show abstract

Section: Resultsmentioning

confidence: 96%

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

et al. 2012

View full text Add to dashboard Cite

show abstract

“…These materials include Al 2 O 3 , Ta 2 O 5 , HfO 2 , ZrO 2 , Zr silicate, and Hf silicate. [1][2][3] It is clear that, whereas these high-k dielectrics may be suitable for Si CMOS applications, in view of their rigidity, they are unsuitable for flexible devices.…”

Section: Introductionmentioning

confidence: 99%

Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors

Berger

Cho

et al. 2004

Journal of Elec Materi

View full text Add to dashboard Cite

Polyallylamine films, deposited on Si wafers by radio frequency (RF) pulsed plasma polymerization (PPP), were employed as insulating layers of metalinsulator-semiconductor (MIS) capacitors. The insulating polymer films were deposited at plasma reactor temperatures of 25°C and 100°C. Multiple frequency capacitance-voltage (C-V) measurements indicated that an in-situ heat treatment during film deposition increased the insulator dielectric constant. The dielectric constant, calculated from the C-V data, rose from 3.03 for samples with no heat treatment to 3.55 for samples with an in-situ heat treatment. For both sample sets, the I-V data demonstrates a low leakage current value (Ͻ20 fA) up to 100 V. Capacitance-time (C-t) measurements were also used to characterize the mobile ions in the polymer that migrate over time with applied voltage. Results indicate that the polymer layers contain few electrically active defect centers and virtually no pinholes. Hysteresis in the C-V curves with differing sweep directions was more pronounced for in-situ heat-treated samples indicative of mobile charge.

show abstract

“…For HfO 2 , the f D is 0.35-0.4. 15 To study the NBTI characteristics, the −3 V voltage stress was applied for 3 min at room temperature ͑RT͒ to 125°C. After the voltage stresses, the V FB shift and the variations in D it were measured.…”

Section: Methodsmentioning

confidence: 99%

The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation

Maeng

2008

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inDependences of nitrogen incorporation behaviors on the crystallinity and phase distribution of atomic layer deposited Hf-silicate films with various Si concentrations J. Appl. Phys. 104, 054101 (2008) We have prepared plasma enhanced atomic layer deposition HfO x N y thin films by in situ nitridation using nitrogen/oxygen mixture plasma and studied the effects of nitrogen contents and profiles on the negative bias temperature instability ͑NBTI͒. The nitrogen depth profiles and concentrations were controlled by changing the exposure sequences and the nitrogen to oxygen flow ratio, respectively. The best immunity to NBTI degradations was obtained for the nitrogen to oxygen ratio of 2:1 when nitrogen atoms are incorporated away from the high k / Si interface. We propose a dielectric degradation mechanism based on the reaction-diffusion model in which nitrogen plays a role of hydrogen generator at the interface and diffusion barrier in the bulk film.

show abstract

Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

Cited by 79 publications

References 11 publications

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors

The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation

Contact Info

Product

Resources

About