Characteristics of liquid phase deposited SiO₂ on (NH₄)₂S-treated GaAs with an ultrathin Si interface passivation layer

Abstract

The characteristics of liquid-phase-deposited SiO2 film on GaAs were investigated. A mixture of H2SiF6 and H3BO3 aqueous precursors was used as the growth solution. SiO2 on GaAs with (NH4)2S treatment shows good electrical characteristics owing to the reduction of native oxides and sulfur passivation. The electrical characteristics are further improved with an ultrathin Si interface passivation layer (Si IPL) from the reduction of Fermi-level pinning and interface state density. Moreover, during the SiO2 deposition, HF in the growth solution can simultaneously and effectively remove native oxides on Si IPL and provide fluorine passivation on it. The Al/SiO2/Si IPL/(NH4)2S-treated GaAs MOS capacitor shows superior electrical properties. The leakage current densities can reach 7.4 × 10−9 and 6.83 × 10−8 A/cm2 at ±2 V. The interface state density can reach a 2.11 × 1011 cm−2 eV−1 with low frequency-dispersion of 8%.

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

“…24,25 In their study they used only SiO 2 dielectric on the GaAs substrate without applying any high-k dielectrics. 24,25 In their study they used only SiO 2 dielectric on the GaAs substrate without applying any high-k dielectrics.…”

“…In recent studies Dalapati et al and Lee et al worked with ALD SiO 2 and liquid-phase-deposited (LPD) SiO 2 on GaAs respectively. 24,25 In their study they used only SiO 2 dielectric on the GaAs substrate without applying any high-k dielectrics. According to Dalapati et In this paper, we improved the III-V MOS capacitor properties by simultaneously adopting two methods.…”

Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells

“…In addition, dielectric coatings such as Al 2 O 3 , [165,217] AlN, [218] ZnO, [219] TiO 2 , [220] SiO 2 , [221] P 2 O 5 , [222][223][224] LiF 3 , [142] ZnS, [225] GaS, [226] fabricated by various deposition methods such as ALD, MOCVD, and sputtering or solution process, also have a significant passivation effect. In regard to GaAs/polymer HSCs, Ren et al coated the GaAs NWs with TiO x shells, [227] which passivated the NW surface states and further improves the photovoltaic performance (Figure 8a-c), yielding PCEs of 2.36% under white light emitting diode (LED) illumination for devices containing 50 wt% of TiO x -coated GaAs NWs.…”

Brief Review of Surface Passivation on III-V Semiconductor

“…III-V semiconductor materials, such as GaAs, InGaAs, GaSb, InP, InAs, InSb, have high surface state density (>10 13 cm −2 ) lacking a high quality intrinsic oxide passivation layer, which lead to Fermi level pinning, surface recombination accelerating, and therefore deteriorate the device performance in microelectronic and optoelectronic fields. For example, the surface state will cause light carrier loss and decrease the photoelectric conversion efficiency in solar cells [1]; In semiconductor lasers, the surface state in the cavity will cause nonradiative recombination of carriers, which reduce the laser emission efficiency and even lead to catastrophic optical mirror damage [2]; In metal oxide semiconductor field effect transistors (MOSFET) the surface state will cause C-V dispersion and hysteresis [3][4][5].…”

“…Take GaAs for example, the native oxides of GaAs have a complicated chemistry where both As 2 O 3 and Ga 2 O 3 compounds will form when a clean GaAs surface is exposed to oxygen and light. These oxides, which act as nonradiative recombination centers, introduce a mass of surface energy levels in the band gap and pin the surface Fermi level within the band gap of the semiconductor [4,5]. These oxides also present water solubility with a pH dependency.…”