Characteristics of InSb grown on single crystalline Mn–Zn ferrite substrates

Fujioka, Hiroshi; Ikeda, Takeshi; Ono, Kanta; Ito, Seiya; Oshima, Masaharu

doi:10.1016/s0022-0248(02)01311-8

Cited by 18 publications

(3 citation statements)

References 5 publications

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“…From the XRD patterns of InSb films, it has been observed that the structure of films are found to be cubic with predominant orientation along the (111) direction. The results are in comparable with films prepared by other techniques [7,14]. It is concluded that the polycrystalline InSb film can be grown highly oriented along the (111) direction by vacuum evaporation technique.…”

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confidence: 79%

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Senthilkumar

Venkatachalam

Viswanathan

et al. 2005

Cryst. Res. Technol.

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Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at different substrate temperatures (303, 373 and 473 K) by vacuum evaporation. The elemental composition of the deposited InSb film was found to be 52.9 % (In) and 47.1 % (Sb). X-ray diffraction studies confirm the polycrystallinity of the films and the films show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with the increase of substrate temperature, which was found to be in the range from 22.36 to 32.59 nm. In Laser Raman study, the presence of longitudinal mode (LO) confirms that the deposited films were having the crystalline nature. Raman peak located at 191.26 cm -1 shift towards the lower frequencies and narrows with increase in deposition temperature. This indicates that the crystallinity is improved in the films deposited at higher substrate temperatures. Hall measurements indicate that the films were p-type, having carrier concentration ≅ 10 16 cm -3and mobility (4 -7.7) ×10 3 cm 2 /Vs. It is observed that the carrier concentration (N) decreases and the Hall mobility (µ) increases with the increase of substrate temperature.

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Section: ____________________supporting

confidence: 79%

Influence of substrate temperature on the properties of vacuum evaporated InSb films

Senthilkumar

Venkatachalam

Viswanathan

et al. 2005

Cryst. Res. Technol.

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“…Mn-Zn ferrites, which have been studied for decades because of their high initial permeability, low losses, high saturation magnetization and relatively high Curie temperature, have widely served as the fundamental materials in electronic and information industries, and used as recording heads, choke coils and communication pulse transformers, and so on [1,2].…”

Section: Introductionmentioning

confidence: 99%

Comparative Study on Mn-Zn Ferrites by One-Step Synthesis and Conventional Two-Step Synthesis

Xing

Peng

et al. 2010

AMR

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Mn-Zn ferrites doped with Cr3+ were prepared by “one-step synthesis” and conventional two-step synthesis methods, respectively. Their phase compositions and microstructures were characterized by X-ray diffraction and scanning electron microscopy, respectively. And their magnetic magnetic performance, such as saturation magnetization (Ms), magnetic hysteresis, initial permeability μi and power loss were comparatively investigated by vibrating sample magnetometer. It was observed that the difference of magnetic performance of the samples prepared by both methods is little. The similar performance of both methods makes the “one-step synthesis” especially attractive for application when considering energy economization.

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“…The typical potential application for III-V compound semiconductors on MnZn ferrite is a magnetic field sensor with enhanced sensitivity by the high permeability of the substrate. So far, we have successfully grown various III-V compound semiconductors such as GaN [3], AlN [4][5][6], InAs [7], and InSb [8] on the MnZn ferrite substrates with MBE and pulsed laser deposition (PLD). [9] Among these materials grown on MnZn ferrite, group III nitrides show excellent optical and structural properties because of relatively small lattice mismatch (3.6% for AlN and 5.6% for GaN).…”

Section: Introductionmentioning

confidence: 99%