2005
DOI: 10.1002/crat.200410385
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Influence of substrate temperature on the properties of vacuum evaporated InSb films

Abstract: Indium Antimonide (InSb) thin films were grown onto well cleaned glass substrates at different substrate temperatures (303, 373 and 473 K) by vacuum evaporation. The elemental composition of the deposited InSb film was found to be 52.9 % (In) and 47.1 % (Sb). X-ray diffraction studies confirm the polycrystallinity of the films and the films show preferential orientation along the (111) plane. The particle size (D), dislocation density (δ) and strain (ε) were evaluated. The particle size increases with the incr… Show more

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Cited by 40 publications
(19 citation statements)
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“…where b is the FWHM of (111) peak, D is crystalline size, and n is a factor, which is unity for thin film [15]. The calculated value of the strain and the dislocation densities are 3.7 9 10 -2 , 3.8 9 10 -4 .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…where b is the FWHM of (111) peak, D is crystalline size, and n is a factor, which is unity for thin film [15]. The calculated value of the strain and the dislocation densities are 3.7 9 10 -2 , 3.8 9 10 -4 .…”
Section: Resultsmentioning
confidence: 99%
“…The double layer capacitance C dl value is obtained from the frequency at which Z imaginary is maximum [15] X Z im ð Þ max…”
Section: Electrochemical Impedancementioning
confidence: 99%
“…The TiN/NbN multilayer coatings exhibited the characteristic peaks centered at 180, 210 and 560 cm optical phonon band shifts to higher frequencies. The presence of longitudinal optical (LO) phonon modes confirms that the deposited coatings are crystalline in nature [36]. Photoluminescence measurements are carried out at room temperature to study the luminescent properties of thin films.…”
Section: Resultsmentioning
confidence: 95%
“…Since dislocation density and strain are the manifestation of dislocation network in the films, the decrease in dislocation density indicates the formation of highquality films at higher substrate temperatures. This becomes possible due to the fact that when the substrate is kept at higher temperature, the dislocations get more thermal energy and have a higher mobility [21].…”
Section: Structural Propertiesmentioning
confidence: 99%