Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm

Ando, Hiroaki; Katô, Hiroshi; Kimura, Tatsuya; Yamaoka, Toyoshi; Kaneda, T.

doi:10.1109/jqe.1978.1069698

Cited by 104 publications

(17 citation statements)

References 12 publications

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“…Multiplication gain and excess noise are key performance metrics for APDs. Although Ge APDs can achieve high gain using carrier multiplication close to avalanche breakdown [2,3], they are generally considered to suffer from the high multiplication noise in germanium [4]. High avalanche gain with low excess noise has been demonstrated in surface normal operating Ge detectors in a Separate Absorption, Charge, and Multiplication (SACM) configuration using Ge as light absorption layer and Si as the multiplication layer [5], enabling an impressive gain-bandwidth product of 340GHz and28dBm receiver sensitivity at 10Gb/s.…”

Section: Introductionmentioning

confidence: 99%

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

et al. 2015

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Abstract:We demonstrate low-voltage germanium waveguide avalanche photodetectors (APDs) with a gain×bandwidth product above 100GHz. A photonic receiver based on such a Ge APD, including a 0.13µm SiGe BiCMOS low-noise trans-impedance amplifier and a limiting amplifier, is realized. A 5.8dB sensitivity improvement is demonstrated at -5.9V bias at an avalanche gain of 6 through bit error ratio measurements. The absolute sensitivity in avalanche mode is -23.4dBm and -24.4dBm at a bit error ratio of 1×10-12 and 1×10 -9 respectively. ©2014 Optical Society of America

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Section: Introductionmentioning

confidence: 99%

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

et al. 2015

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“…30 The noise properties of Ge are thus key to the successful operation of Ge APDs and this requires careful device design. For Ge APDs to be operated in Geiger-mode they must be cooled to 77 K or below to keep the dark counts at an acceptable level.…”

Section: Nir Detection Using Ge Apdsmentioning

confidence: 99%

Progress towards photon counting between 1μm and 1.6μm using silicon with infrared absorbers

Morrison

Hayes²,

Gity

et al. 2010

SPIE Proceedings

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Silicon based avalanche photodiodes (APDs) have exhibited impressive performance over the visible spectrum for more than a decade. Photon counting with these devices has progressed to the level where room-temperature operation and low dark count rates (< 100 Hz) are commonplace. Several commercial enterprises have been established to capitalise on these devices and many niche markets are now serviced by incorporating these devices into suitable systems. This paper describes one approach that allows the performance of silicon based Geigermode avalanche photodiodes (GM-APDs) to be extended into the near-infra-red. The process development is described whereby Ge absorbers are incorporated into adapted silicon APD designs to provide separate absorption and multiplication devices. Simulation results are presented outlining the performance of these devices at wavelengths between 1 μm and 1.6 μm.The performance results from silicon APD designs are presented for visible wavelengths. A silicon-germanium bonding process is described and the challenges presented in developing the hybrid absorber/multiplier structure are detailed. Finally, a summary of appropriate custom application integrated circuits for various applications is discussed.

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“…The wavelength region, where the quantum efficiency ofGe-APD is more than 40%, spreads over the 0.8 to 1.6 J-Lm range. 10 The detected baseband signal is amplified up to the necessary level. Since the pulse train repetition rate is very low, detected baseband frequency is gathered around 840 MHz.…”

Section: Measurement System Descriptionmentioning

confidence: 99%

Wavelength dispersion of optical fibers directly measured by ’’difference method’’ in the 0.8–1.6 μm range

Sugimura

Daikoku

1979

Review of Scientific Instruments

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A novel technique to measure the wavelength dispersion of optical fibers in the 0.8-1.6 microm range, where germanium avalanche photodiodes possess adequate quantum efficiency, is described. Dispersion is defined as dtau/dlambda, which can safely be changed to the difference formula Deltatau/Deltalambda, when Deltalambda is small, where tau is the transit time of the wave and lambda is the light wavelength. A monochromatic light, whose amplitude is modulated by a sinusoidal baseband signal, is launched into the optical fiber. The phase of the sinusoidal baseband signal changes with the monochromatic light wavelength variation due to the dispersion of the fiber. The phase variation gives an accurate value of Deltatau. The wavelength dispersion is obtained directly from the values of both Deltatau and Deltalambda. Using this technique, the wavelength dispersion of a single mode optical fiber, for example, is measured in the single mode wavelength range from 0.92 to about 1.6 microm.

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Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm

Cited by 104 publications

References 12 publications

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

Progress towards photon counting between 1μm and 1.6μm using silicon with infrared absorbers

Wavelength dispersion of optical fibers directly measured by ’’difference method’’ in the 0.8–1.6 μm range

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