High sensitivity 10Gb/s Si photonic receiver based on a low-voltage waveguide-coupled Ge avalanche photodetector

Chen, Hong Tao; Verbist, Jochem; Verheyen, Peter; Heyn, Peter De; Lepage, Guy; Coster, J. De; Absil, P.; Yin, Xin; Bauwelinck, Johan; Campenhout, Joris Van; Roelkens, Günther

doi:10.1364/oe.23.000815

Cited by 59 publications

(35 citation statements)

References 20 publications

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“…To monitor the local operation of a chip it is possible to incorporate photodetectors. These can be classical photodetectors, but they should be mounted that they introduce only a small power penalty. They can use a fractional tap waveguide, or they can be incorporated on a waveguide where the power needs to be minimized.…”

Section: Challenges For An Integrated Photonic Design Flowmentioning

confidence: 99%

Silicon Photonics Circuit Design: Methods, Tools and Challenges

Bogaerts

Chrostowski

2018

Laser & Photonics Reviews

403

230

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Silicon Photonics technology is rapidly maturing as a platform for larger‐scale photonic circuits. As a result, the associated design methodologies are also evolving from component‐oriented design to a more circuit‐oriented design flow, that makes abstraction from the very detailed geometry and enables design on a larger scale. In this paper, the state of this emerging photonic circuit design flow and its synergies with electronic design automation (EDA) are reviewed. The design flow from schematic capture, circuit simulation, layout and verification is covered. The similarities and the differences between photonic and electronic design, and the challenges and opportunities that present themselves in the new photonic design landscape, such as variability analysis, photonic‐electronic co‐simulation and compact model definition are discussed.

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Section: Challenges For An Integrated Photonic Design Flowmentioning

confidence: 99%

Silicon Photonics Circuit Design: Methods, Tools and Challenges

Bogaerts

Chrostowski

2018

Laser & Photonics Reviews

403

230

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“…Because of that, extra electronic stages with trans-impedance amplifiers (TIA) or limiting amplifiers (LA) are typically attached to the devices. Improved performance photo-detectors can be obtained by switching over to devices that exploit an internal multiplication gain 1,14,[40][41][42][43][44][45][46][47][48] , i.e. on-chip avalanche photodetectors (APDs).…”

Section: Introductionmentioning

confidence: 99%

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

Benedikovič

Virot

Aubin

et al. 2020

Integrated Optics: Devices, Materials, and Technologies XXIV

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Owing to its low-cost, high-yield, and dense integration ability, silicon nanophotonics is a good candidate to tackle the needs of exponentially growing communications in data centers, high-performance computers, and cloud services. Moreover, a number of nanophotonic functions are now available on a single chip, as they take advantages of siliconfoundry process maturity and epitaxial germanium integration. Optical photodetectors are key building blocks in the library of group-IV components and their performances are quite successful nowadays. In particular, silicon-germanium waveguide-integrated photodetectors are fixing new standards for next generation of on-chip interconnects in terms of compactness, speed, power consumption and cost. Indeed, conventional pin photodetectors yield good responsivities (~1 A/W in a 1.5 µm wavelength range), high bandwidths (~50 GHz), and dark currents well below 1 µA. Despite recent advances, their optical power sensitivities remain rather modest and speeds are limited to 25 Gbps only, however. Compensating for the insufficient photodetector sensitivity requires higher transmitter output powers and therefore higher energy consumption. Additional energy savings can be obtained by eliminating receiver electronics. Alternatively, an appealing approach is to exploit device structures with an internal multiplication gain to lower even more the power budget and improve energy efficiency of chip-based optical links. In this work, we report on waveguideintegrated photodetectors with lateral silicon-germanium-silicon heterojunctions. Here, we present avalanche photodetectors fabricated on 200-mm silicon-on-insulator wafers using complementary metal-oxide-semiconductorcompatible processes. Devices operate in the low-gain-regime to facilitate high-speed link operations at 1.55 µm wavelengths. An error-free signal detection was achieved at 28 Gbps, with power sensitivity of-11 dBm for 10-9 biterror-rate, which is a relevant link rate for emerging chip-scale optical interconnects.

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“…A tranceiver's power consumption is largely determined by the sensitivity of its optical system, in which a p-i-n photodiode is often used due to its low operation voltage despite avalanche photodiodes provide better sensitivities. Although Ge-only APDs have been recently reported to operate at voltages below 10V [1]- [3], they often suffer from the low gain-bandwidth product (GBP) (low bandwidth at high gain) due to the near-unity impact ionization coefficient ratio of germanium -a non-ideal material for APDs. On the other hand, Si-Ge avalanche photodiodes, which uses silicon as the avalanche multiplication region, have consistently shown over 300GHz gain-bandwidth product and 10dB better sensitivity than p-i-n receivers [4], [5].…”

Section: Introductionmentioning

confidence: 99%