Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

“…The PL peak intensity (FWHM) of GaAsN material has been found to exponentially decrease (increase) with increasing N incorporation [27,28]. An increase in luminescence efficiency was also previously reported when antimony incorporates in dilute-nitride materials grown by MOVPE [6]. We observed that both In and Sb incorporation in the dilute-nitride films result in a roughly exponential narrowing of the PL full width half-maximum (FWHM), compared with the baseline GaAsN film, as shown in Fig.…”

“…Van der Pauw-Hall measurements were used to determine the background hole concentrations for samples (300 nm-thick) grown on semi-insulating GaAs (100) and (311)B substrates. After thermal annealing treatment, the hole carrier concentration closely matches the carbon acceptor concentration [6,9]. Calibrated secondary ion mass spectroscopy (SIMS) measurements were used on selected samples to determine the actual InGaAsN films composition with 75% errors in the N contents.…”

“…Dilute-nitride materials grown by MBE generally have very low background carrier concentrations ( $ 1 Â 10 15 cm À 3 ). By contrast, high density of background carbon impurities, which correlates with poor luminescence properties and short minority carrier diffusion length, is a challenging issue for MOVPEgrown dilute-nitride-antimonide materials [4,6]. Unintentional carbon incorporation is aggravated by the low growth temperatures generally employed to achieve efficient N incorporation.…”

Epitaxy for Energy Materials

“…For example, it was reported that Sb plays a role as alloy constituent and simultaneously as a surfactant in the growth of the quinternary alloy [92,93]. For example, it was reported that Sb plays a role as alloy constituent and simultaneously as a surfactant in the growth of the quinternary alloy [92,93].…”

Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates

“…GaInNAs(Sb) alloy is the only bulk material that can realize such a requirement at present, but its short minority carrier diffusion length due to deep-level defects is still a serious problem that limits device performances [1,2]. Moreover, high-quality crystal growth by metal-organic vapor phase epitaxy (MOVPE), which is more suitable for mass production than molecular beam epitaxy (MBE), is still a difficult challenge [3,4].…”