Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1−xAs/GaAs1−yPy superlattice on vicinal substrates

Quantum wire‐on‐well (WoW) cell with long carrier lifetime for efficient carrier transport

“…This finding supports the previously proposed mechanism that layer undulation is caused by step bunching that normally occurs over plural steps. Indeed, it was observed that the lateral periodicity of layer undulation was strongly dependent on growth temperature : Higher growth temperature induced larger lateral periodicity in the undulated layers, and no undulation was found in low‐temperature growth.…”

“…The top p‐region and the bottom n‐region were grown using TMGa at 610 °C, and the i‐region including the superlattice was grown using TEGa at 530 °C. As mentioned previously, the low‐temperature growth of the superlattice using TEGa on a 6 ° off substrate was required to suppress excessive layer undulation and resultant degradation in the quality of the stacked layers .…”

“…Such a structure can be regarded as in‐plane nanowires embedded in thin quantum wells, which is an attractive low‐dimensional structure. However, the thickness fluctuation makes strain balancing difficult , and low‐temperature growth has been attempted in order to suppress layer undulation and to make it possible to stack a large number of InGaAs/GaAsP periods .…”

“…It was found recently that the growth of the InGaAs nanowires by layer undulation can be improved by the use of triethylgallium (TEGa) instead of commonly used trimethylgallium (TMGa) . Low‐temperature growth for moderating layer undulation by TMGa is accompanied by two issues: (1) unintentional p‐type doping due to enhanced carbon incorporation that reduces electric field applied to the intrinsic region containing nanostructure and (2) instability of surface morphology due to insufficient surface migration of the adatoms on the surface caused by the existence of residual methyl group as a result of TMGa decomposition .…”

Экспериментальное и теоретическое исследование спектров фоточувствительности структур с квантовыми ямами-точками In-=SUB=-0.4-=/SUB=-Ga-=SUB=-0.6-=/SUB=-As оптического диапазона 900-1050 nm

“…В последнее время большой интерес вызывают наноструктуры, обладающие свойствами, промежуточными между свойствами КЯ и КТ [11][12][13][14][15]. Они вносят сравнимый с КЯ вклад в фототок, и при их формировании, как и в случае КТ, происходит бездефектная релаксация упругих напряжений.…”