Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application

The role of photonics in energy

“…In addition, recent work on both dilute-nitride and dilute-SbN material systems has shown promise to push into the wavelength regime for TPV, [177][178][179][180] where the use of dilute-bismuthide materials as absorbers in the 2 to 3 μm spectral region has shown promise. 181 For the emitter, a 2-D tantalum PC has been used, and an electrical efficiency up to 16% is predicted. 182 Another approach employs a graded-index tungsten emitter structure to enhance the spectral efficiency in the solar TPV system.…”

Structures based on GaAs(Sb)(N) semiconductor alloys for high efficiency multi-junction solar cells

“…Indeed, the band structure of GaAs 1-x-y Sb x N y can be modeled by a double BAC (DBAC) model, which is a combination of a CB BAC model for GaAs 1-y N y and a VB BAC model for GaAs 1-x Sb x [68,69]. Moreover, the The GaAs 1-x-y Sb x N y alloy has been recently applied to solar cell technology, both as a thick layer [52,[71][72][73][74][75][76][77][78][79][80][81][82][83][84] and as a capping layer over InAs quantum dots [85,86]. Nevertheless, the obtained solar cell performance is not satisfactory up to now.…”

“…As was discussed in Chapter 2, GaAs 1-x-y Sb x N y is a suitable candidate for its implementation as 1.0-1.15 eV sub-cell in optimum GaAs/Ge-based MJSCs designs. Bulk layers of GaAs 1-x-y Sb x N y material have already been experimentally tested for MJSC applications [52,72,73,77,[79][80][81][82]84]. However, as far as we know, the efficiencies achieved have not approached the predicted values, mainly due to difficulties in achieving high-quality material [92].…”