Characteristics of 21H-SiC Thin Film-Based Schottky Barrier Diodes Using TiN Contacts

Abstract

The fabrication of Schottky barrier diodes based on thin films of 21H polytype of SiC is reported. The films were deposited using a single composite target of Si and graphite by magnetron sputtering. The formation of the 21H polytype of SiC was confirmed by x-ray diffraction. The devices were fabricated on single-crystal Si substrates, and electrical properties with TiN and Au/TiN as top lateral contacts were investigated. The rectifying nature, temperature (in the range 300-423 K), and top electrode work function dependence of Schottky parameters were investigated. The room-temperature turn-on voltages for the TiN and Au/TiN top contacts were 8.9 V and 12.8 V, respectively. The ideality factor decreased while the barrier height increased with an increase in temperature. The barrier height for different temperatures was in the range of 1.16-0.82 eV and 0.9-0.77 eV for TiN and Au/TiN interfaces with SiC, respectively. The presence of TiC x N y on the surface of the TiN-SiC-Si-Au device at high temperatures observed using Raman spectroscopy revealed the inhomogeneity due to variation in local interfacial structure. It was demonstrated that the 21H-SiC-based thin film Schottky barrier diodes are a promising alternative for many applications.

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

“…This approach proposed by Werner and Güttler 13 and the apparent barrier height (Φ ap ) is always lower than the .…”

“…In general, the BH value extracted from the standard TE theory is usually decrease with temperature and n increases due to the existence inhomogeneities of BH at M/S interface and these higher changes at lower temperaures cannot explain only in terms of standard TE and TFE theories. [11][12][13][14] The objective of this work is to an investigate temperature dependent basic electric parameters and possible CTCs in the Au/Al 2 O 3 /n-Si SDs between 200 K and 400 K by using the IV between ±3 V. In this study, the increase in BH observed with increase in the temperature, higher values of n even at room temperature, and the deviation linearity of the conventional RP were successfully explained by the GD-model.…”

“…During the preparation of samples, many Nss with energies located at Eg may be occurred and alter performance of them. [12][13][14] Therefore, it is more significant to determine the energy distribution of Nss and re-ordering of them under temperature effect. In general, the BH value extracted from the standard TE theory is usually decrease with temperature and n increases due to the existence inhomogeneities of BH at M/S interface and these higher changes at lower temperaures cannot explain only in terms of standard TE and TFE theories.…”