Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range

Bakkaloğlu, Ö.F.; Ejderha, Kadir; Efeoǧlu, Hasan; Karataş, Şükrü; Türüt, A.

doi:10.1007/s12633-021-01132-1

Cited by 2 publications

(1 citation statement)

References 31 publications

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“…This disagreement is attributed to the inadequacy of the Norde model for Schottky diodes having an ideal factor greater than unity [30]. This can also be attributed to the fact that by Cheung's method only the higher nonlinear bias regime of the forward bias in I-V plots is exploited, while the entire forward voltage area of the I-V plots is considered for the Norde function [31]. We confirm through calculations by Norde that the series resistance decreases with the presence of AgNPs until duration of 3 min.…”

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confidence: 99%

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

Hemdani,

Rahmani

2024

Phys. Scr.

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In this paper, we studied the effect of the passivation of silicon nanowires (SiNWs) by silver nanoparticles (AgNPs) on the efficiency of Ag/SiNWs/Si Schottky diodes. SiNWs are obtained by one-step Ag-assisted chemical etching method. AgNPs were deposited on SiNWs using an electroless dipping method. Schottky junction devices have been successfully made using silicon nanowires coated with silver nanoparticles. The current–voltage (I-V) characteristics of Ag/AgNPs-SiNWs Schottky diode have been investigated by varying the immersion time in silver nitrate solution from 1 to 5 min. The I-V characteristics presented in logarithmic scale confirmed the domination of SCLC conduction mechanism at high voltage. The ideality factor (n), height of potential barrier (φb) and series resistance (Rs) of diodes are calculated by adopting the Cheung method. Compared to the Ag/SiNWs Schottky junction, the diode that presents AgNPs at the interface shows a significant improvement in electrical parameters. The potential barrier reaches 1.09 eV and the ideality factor is reduced to 2.64 with the presence of AgNPs for an immersion time of 1 min. Norde’s equation has also been used to calculate the series resistance and the potential barrier. The results obtained by Norde method are slightly shifted compared to those found by Cheung functions while the findings concerning the optimization of the immersion time are practically the same.

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Section: Resultsmentioning

confidence: 99%

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

Hemdani,

Rahmani

2024

Phys. Scr.

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Characterisation of interface states of Al/p-Si Schottky diode by current–voltage and capacitance–voltage–frequency measurements

Moloi,

Bodunrin

2023

J Mater Sci: Mater Electron

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In this study, the fabricated Al/p-Si Schottky diode is characterised at room temperature using current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) techniques. The energy distribution profile of the diode’s interface state density is generated using different diode parameters. In the I–V measurements, the variation in energy, charge, and density of the interface states is described in terms of the applied forward bias with respect to the zero Schottky barrier height. The capacitance measurements, on the other hand, are used to address a long-standing low-voltage capacitance peak in terms of the distribution of interface state charge. In general, both techniques complement each other, indicating that the space charge region (SCR) starts to be varied at a voltage of − 0.66 V, after the compensation of interface states by majority carriers. The findings presented here are critical for current and future research on junction-based devices for a variety of applications in which the SCR and bulk material properties are examined solely from metal-semiconductor (m–s) interface states.

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Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range

Cited by 2 publications

References 31 publications

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

Characterisation of interface states of Al/p-Si Schottky diode by current–voltage and capacitance–voltage–frequency measurements

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