The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Durmuş, Haziret; Tataroğlu, A.; Altındal, Ş.; Yıldırım, Mert

doi:10.1016/j.cap.2022.09.015

Cited by 13 publications

(3 citation statements)

References 28 publications

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“…The current through an MPS structure with an interface layer that has series resistance and forward bias is provided by the TE theory ((V 3kT/q) [5,26,30,31]…”

Section: Resultsmentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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Using the I-V characteristics both in the dark and under varied illumination-intensities (50–250 mW.cm−2) by 50 mW.cm−2 steps in the wide range bias-voltage (±5 V), specific fundamental electrical and photo effects parameters of the Au/C20H12/n-Si SBD were examined. Due to the creation of electron–hole pairs and their drift in opposite directions under the influence of an electric field, the value of photocurrent in the reverse bias (Iph) increases when illumination density is increased. The barrier height (ΦB0) tended to decrease due to the increase in photocurrent, while the diode’s ideality factor (n) increased with increasing illumination intensity. Also, the Schottky structure’s open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) were determined to be 0.358 V, 95.5 μA, 33%, and 0.028% under 50 mW.cm−2, respectively. The Rs and Rsh values found using Ohm’s law are a vital function of illumination and voltage which decrease with increasing illumination intensity. Additionally, using the forward bias I-V data and accounting for the bias dependent of the effective barrier height (Φe) and ideality factor n(V) for different illumination intensities, the energy density distribution profile of surface states (Nss) was obtained. According to these results, the organic interlayer consisting of C20H12 is light-sensitive and suitable for optoelectronic devices such as photodetectors and photodiodes.

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“…The current through an MPS structure with an interface layer that has series resistance and forward bias is provided by the TE theory ((V 3kT/q) [5,26,30,31]…”

Section: Resultsmentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

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“…56,[59][60][61] Plot 13 revealed rectification ratio RR vs voltage at various temperatures of Au/PPy-MWCNTs/TiO 2 /Al 2 O 3 /p-Si/Al. The structure has a good rectification ratio [59,[62][63][64][65][66][67].…”

Section: Resultsmentioning

confidence: 99%

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO₂/Al₂O₃/p-Si/Al

Ashery¹

2022

ECS J. Solid State Sci. Technol.

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We present here a novel construction of Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al which was not given in a lecture earlier. We synthesized this construction for request in manufactured electronic devices, sensors, supercapacitors, diodes, and high-energy storage devices and successfully tuned the dielectric constant ɛ' and dielectric loss tangent tan δ by variable frequency, temperature, and voltage. At high frequency (2×107 Hz), the dielectric constant ɛ' and dielectric loss tangent tan δ have positive and negative values from (250 to – 3500) and (-2 to 8), respectively; however at all frequencies (107, 106, 105) Hz, the ɛ' has high positive values (1000, 3500, 10000), but tan δ has low values (2.6, 1.8, 4.5). At frequencies of 103 and 102 Hz, the ɛ' and tanδ have positive and negative values, while at a frequency of 10 Hz, the ɛ' and tan δ have negative values only. The values of ɛ' with lnf at all voltages and temperatures have negative values at high and low frequencies. In mid frequencies, the ɛ' have positive values. Also, the Col-Col diagram and the current conduction mechanism of this construction Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al were studied.

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“…These structures are also the basis of many electronic devices, such as photodiodes, photodetectors, transistors, and solar cells [2]. Interfacial layers can be grown between the M/S interface by native or some special methods [3]- [5]. Many ways are used to deposit an interfacial layer, such as the sol-gel method [6], [7], chemical vapour deposition [8], electrospinning [9], [10], molecular beam layer deposition [11], and spin coating [12] as well as other techniques [13].…”

Section: Introductionmentioning

confidence: 99%

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Kaymaz

2023

Balkan Journal of Electrical and Computer Engineering

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This study focuses on the abnormal peaks observed in voltage-dependent capacitance graphs and negative capacitance behaviors of the GaAs-based MOS devices for the unirradiated sample and after exposing the device to 5 and 10 kGy ionizing (gamma) radiation doses. Experimental results showed that the amplitude of the abnormal peaks, observed at about 1.75 V, increases with the irradiation dose. The peak point was also shifted toward the positive biases after irradiation. Furthermore, the conductance values increased rapidly and reached their maximum level, while the capacitance values reached their minimum level in the high voltage biases. This situation is directly related to the inductive behavior of the MOS devices. However, it has been determined that the MOS device's inductive behavior is more effective after irradiation. These behaviors can be observed because of the ionization process, the MOS device's series resistance, surface states, and due to some displacement damages caused by ionizing radiation. Therefore, the series resistance and the radiation-induced surface states were obtained to clarify the impact of radiation on the device. It was seen that the radiation-induced surface states changed around 3x1012 for the maximum cumulative dose (10 kGy), and the series resistance values changed less than 2 Ω (it was obtained 8.74 Ω for 0 kGy and 6.82 Ω for 10 kGy). As a result, the degradation in the GaAs-based MOS device was determined to be insignificant for 10 kGy doses. Therefore, this MOS device can be safely used as an electronic component in radiation environments such as nuclear plants and satellite systems.

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The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Cited by 13 publications

References 28 publications

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO₂/Al₂O₃/p-Si/Al

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

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The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes

Cited by 13 publications

References 28 publications

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO2/Al2O3/p-Si/Al

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

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The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO₂/Al₂O₃/p-Si/Al