Characterisation of the Interface States between Amorphous Diamond-Like Carbon Films and (100) Silicon

Konofaos, N.; McClean, I. P.; Thomas, C. B.

doi:10.1002/1521-396x(199705)161:1<111::aid-pssa111>3.0.co;2-u

Cited by 42 publications

(19 citation statements)

References 20 publications

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“…Therefore, the frequency dependent electrical characteristics are very important according to accuracy and reliable result. The characterization of interface states in MIS structure has become a subject of very intensive research in the last decade, and a number of workers have suggested various ways of characterization [5,[14][15][16][17][18][19]. The forward and reverse bias C-f and G/x-f measurements give the important information about the energy distribution of the interface states of the MIS structure.…”

Section: Introductioncontrasting

confidence: 85%

The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures

Tataroğlu

Altındal

Tataroğlu

2006

Microelectronic Engineering

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Section: Introductioncontrasting

confidence: 85%

The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures

Tataroğlu

Altındal

Tataroğlu

2006

Microelectronic Engineering

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“…However, this saturation is different at low and intermediate frequencies and temperatures especially in the depletion and accumulation regions, which is due to the series resistance (R s ) of the device, interface states (N ss ), interfacial insulator layer, and surface charges [6][7][8][9][10][11][12][13]. The performance and reliability of these devices are especially dependent on the formation barrier height at the M/S interface, R s of devices, doping concentration, and N ss [6][7][8][9][10][11][12][13][14][15][16]. In addition, the change in temperature has very important effects on the determination of such devices' parameters [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Arslan

Şafak

Altındal

et al. 2010

Journal of Non-Crystalline Solids

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a b s t r a c tThe temperature dependent capacitance-voltage (C-V) and conductance-voltage (G/x-V) characteristics of (Ni/Au)/Al 0.22 Ga 0.78 N/AlN/GaN heterostructures were investigated by considering the series resistance (R s ) effect in the temperature range of 80-390 K. The experimental results show that the values of C and G/x are strongly functioning of temperature and bias voltage. The values of C cross at a certain forward bias voltage point ($2.8 V) and then change to negative values for each temperature, which is known as negative capacitance (NC) behavior. In order to explain the NC behavior, we drawn the C vs I and G/x vs I plots for various temperatures at the same bias voltage. The negativity of the C decreases with increasing temperature at the forward bias voltage, and this decrement in the NC corresponds to the increment of the conductance. When the temperature was increased, the value of C decreased and the intersection point shifted towards the zero bias direction. This behavior of the C and G/x values can be attributed to an increase in the polarization and the introduction of more carriers in the structure. R s values increase with increasing temperature. Such temperature dependence is in obvious disagreement with the negative temperature coefficient of R or G reported in the literature. The intersection behavior of C-V curves and the increase in R s with temperature can be explained by the lack of free charge carriers, especially at low temperatures.

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“…Due to the presence of oxide layer and two surface-charge regions, MOS physics is more complicated than semiconductor surface physics. The importance in Si technology, the semiconductor/ insulator (Si/SiO 2 ) interface and defects on its neighborhood have been extensively studied in the past four decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%