The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures

Tataroğlu, B.; Altındal, Ş.; Tataroğlu, A.

doi:10.1016/j.mee.2006.04.002

Cited by 67 publications

(32 citation statements)

References 26 publications

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“…These results are quite compatible with those found in a different material [23]. The fact that ε and ε values are greater at low frequencies could be attributed to the presence of a possible interface polarization mechanism, since interface states cannot follow the AC signal at high frequencies and do not contribute to the capacitance, due to the lack of any interface polarization mechanism [21]. In general, polarization mechanisms at low frequencies are affected by electronic, ionic, dipolar and interface or surface polarization distribution [24,25].…”

Section: Frequency Dependence Of Dielectric Propertiessupporting

confidence: 89%

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Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

et al. 2016

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An (Au/Ti)/Al2O3/n-GaAs structure with thin (30 Å) interfacial oxide layer (Al2O3), formed by atomic layer deposition technique is fabricated to investigate both frequency and applied bias voltage dependences of real and imaginary parts of dielectric constant (ε and ε ) and electric modulus (M and M ), loss tangent tan δ and ac electrical conductivity σAC in a wide frequency range from 1000 Hz to 1 MHz at room temperature. The dielectric properties of the (Au/Ti)/Al2O3/n-GaAs metal-insulator-semiconductor structure are obtained using the forward and reverse bias capacitance-voltage (C-V ) and conductance-voltage (G/ω-V ) measurements in the applied bias voltage range from -4 V to +4 V, at room temperature. Experimental results show that the dielectric parameters were strongly frequency and voltage dependent. For each frequency the (C-V ) plots show a peak and the change in frequency has effect on both the intensity and position of the peak. ε , ε and tan δ decrease with increasing frequency, whereas σAC increases with increasing frequency at applied bias voltage. M increases with the increasing frequency and reaches a maximum. M shows a peak and peak position shifts to higher frequency with increasing applied voltage. It can be concluded that the ε , ε , tan δ, M , M and σAC values of the (Au/Ti)/Al2O3/ n-GaAs structure are strongly dependent on both the frequency and applied bias voltage especially in the depletion and accumulation region. Also, the results can be deduced to imply that the interfacial polarization is easier at low frequencies, therefore contributing to the deviation of dielectric properties and AC electrical conductivity of (Au/Ti)/Al2O3/n-GaAs structure.

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Section: Frequency Dependence Of Dielectric Propertiessupporting

confidence: 89%

“…The dielectric constant ε can be calculated from the measured capacitance C ma values in the strong accumulation region at different frequencies using the following equation [20,21]:…”

Section: Frequency Dependence Of Dielectric Propertiesmentioning

confidence: 99%

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

et al. 2016

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“…The G/x-V measurements (Fig. 5) show that the obtained curves are not as expected due to the number of parameters such as series resistance, interface states density and frequency dependency of these states as stated above [38]. However, high frequency G/x-V measurements (C500 kHz) show a similar behaviour with the low frequency G/x-V measurements.…”

Section: Frequency Dependency Of Series Resistance and Interface Statmentioning

confidence: 71%

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Kahraman

Yılmaz

Kaya³

et al. 2015

J Mater Sci: Mater Electron

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The purposes of this paper are to investigate the post deposition annealing (PDA) effect on structural and electrical characterizations of HfO 2 MOS capacitor and the frequency dependency of series resistance and interface states in this device. PDA processes on the HfO 2 films deposited using RF magnetron sputtering system were performed in N 2 ambient at 350, 550, 650, and 750°C. The phase identifications and crystallization degrees of the HfO 2 films were determined by using X-ray diffractometry. The grain size of the films was varied from 4.5 to 15.23 with increasing in PDA temperature. The HfO 2 MOS capacitors were fabricated using the as-deposited and annealed films for electrical characterization. C-V and G/ x-V measurements were performed at 1 MHz frequency. The C-V characteristics of the MOS capacitor fabricated with film annealed at 550°C show a better behaviour in terms of the high dielectric constant and low effective oxide charge compared to others. For this device, C-V and G/x-V measurements were performed in different frequencies ranging from 10 kHz to 1 MHz at room temperature. Obtained results show that series resistance and interface states strongly influence the C-V and G/x-V behaviour of the MOS capacitor.

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“…Another reason may be the inhomogeneities affect on apparent BH since current across interface depends exponentially on BH and the current is sensitive to barrier distribution at the interface. The BH estimated from C−V method includes an average value of BHs of patches existing in the contact [19].…”

Section: Results and Dicussionmentioning

confidence: 99%

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Padma

Reddy

2017

Физика И Техника Полупроводников

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The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures

Cited by 67 publications

References 26 publications

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

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The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures

Cited by 67 publications

References 26 publications

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3Interfacial Layer at Room Temperature

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al2O3/n-GaAs with Thin Al2O3Interfacial Layer at Room Temperature

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO2 MOS capacitors

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

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Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al₂O₃/n-GaAs with Thin Al₂O₃Interfacial Layer at Room Temperature