Characterisation of an RF atomic nitrogen plasma source

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

“…As use for a template of group III nitrides, nitridation of Si is an attractive theme. An inductively coupled (ICP) radio frequency (RF) discharge is a best nitrogen source for the growth of group III nitrides by a molecular beam epitaxial (MBE) method because the high efficiency of nitrogen atom production under ultra-pure condition [1][2][3][4].…”

“…The four main spectra of nitrogen atoms, triplet 747.73 nm for 4 P-4 S 0 , 7 lines multiplet 822.73 nm for 4 P-4 P 0 , 8 lines multiplet 869.26 nm for 4 P-4 D 0 e, and 940 nm for 2 P-2 D 0 were indicators for the production of active N+N* atoms. Production of N 2 * are calculated by spectra of the 1st positive series (580-950 nm) and 2nd positive series (300-450 nm) [1][2][3][4]. Intensity data of OES were calculated by numerical integration of each peak and each band [1].…”

Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate

“…The flow rate of N 2 was 3 sccm and the RF power was 400 W. The flux of N 2 gas was 9.2×10 -5 Torr when the nitrogen plasma cells were simultaneously operated. It has been said that the dissociation fraction of N 2 gas is about 20 % in such conventional plasma cells and conditions applied in this work, 20 thus, the N flux is estimated to be about 1.8×10 -5 Torr. Therefore, the growth can be considered as N-rich condition from the ratio of the fluxes between the metals and N. The growth rate of the samples was about 0.9 µm/h under this condition.…”

High nitrogen content InGaAsN/GaAs single quantum well for 1.55μm applications grown by molecular beam epitaxy

“…2 shows the dependence of nitrogen composition in InGaAsN SQW on plasma light intensity as measured by the photodetector voltage, V OPT : As can be seen, the result is not linearly proportional for the higher plasma light intensity. In general, the active species fraction of RF plasma nitrogen source is decreasing with increasing nitrogen flow rate, and saturated in high plasma power region [11]. Moreover, the photodetector also might receive some additional radiation due to the heating of plasma cell when higher power was applied.…”