Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

An atom probe of two parallel electrodes is proposed to monitor adsorbed (ADS) nitrogen atoms in situ during growth of β‐Si3N4 using indirect exposure of effusing active nitrogen beam from the radio frequency induction coupled plasma cell. The β‐Si3N4 film is a component of a double buffer layer (DBL) AlN(0001)/β‐Si3N4/Si(111) to grow high quality the group III nitrides and their alloys on Si. Atom current between the parallel electrodes corresponds to flux of the ADS nitrogen atoms on the inside surface at the atom potential, VA. The ADS atom current received influence of wall and shutter of the cell, because adsorption of nitrogen atom depended wall condition such as temperature and the concentration of adatoms on the wall (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

In situ measurement of adsorbed nitrogen atoms for PA‐MBE growth of group III nitrides on Si

Ohachi

Yamabe

Yamamoto

et al. 2011

“…For the nitridation of Si by plasma assisted molecular beam epitaxy (PA-MBE), which can lower the nitridation temperature than NH 3 -MBE, the control of nitrogen flux is an important issue because the nitridation area and rate is affected by the amount of nitrogen atom flux [18,19 ]. For uniform and slow nitridation adsorbed (ADS) nitrogen adatoms by indirect exposure of N+N* was used, because the life time of nitrogen atoms is long enough to reach substrate after reflection from walls of the growth chamber or shutter.…”

mentioning

confidence: 99%

“…For uniform and slow nitridation adsorbed (ADS) nitrogen adatoms by indirect exposure of N+N* was used, because the life time of nitrogen atoms is long enough to reach substrate after reflection from walls of the growth chamber or shutter. In situ monitoring of the ADS nitrogen flux was made by the self-ionization of nitrogen atoms on a negatively biased electrode [18].…”

mentioning

confidence: 99%

Epitaxial growth of β‐Si₃N₄ by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β‐Si₃N₄/Si(111)

Yamabe

Yamamoto

Ohachi

2011

A fabrication process of an interface reaction epitaxy (IRE) β‐Si3N4 and an IRE AlN were investigated to produce a double buffer layer (DBL) of AlN(0001)/β‐Si3N4/Si(111) for the growth of group III nitrides films on Si. The β‐Si3N4 was formed by using adsorbed (ADS) nitrogen atoms irradiated indirectly from a rf‐plasma cell. Two surface structures of the β‐Si3N4, which were “8 x 8” and “8/3 x 8/3” reconstructions, were fabricated by changing the nitrogen irradiation conditions; complete and incomplete nitridation of Si surface and successive heat treatment up to 875 °C formed the “8 x 8” and “8/3 x 8/3” structures, respectively. IRE AlN was grown by 1 monolayer of Al deposition on the β‐Si3N4 and successive annealing at 875 °C. Al and N polarity DBLs were grown on the “8 x 8” and “8/3 x 8/3” structures, respectively. These results indicated that the polarity of DBL could be controlled by the surface reconstruction of β‐Si3N4 (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Activity modulation MEE growth of 2H‐AlN on Si(111) using double buffer layer grown by PA‐MBE

Ohachi¹,

Yamamoto²,

Ariyada³

et al. 2013

As a demonstration of the activity modulation migration enhanced epitaxy (AM‐MEE) heteroepitaxial 2H‐AlN thin films of 53.8 nm and 171.3 nm thickness on Si(111) on a double buffer layer (DBL) have been grown by the AM‐MEE of plasma assisted molecular beam epitaxy (PA‐MBE) method. It is a droplet free growth and an atomic layer epitaxy (ALE). The influence of the DBL, which was formed in a MBE chamber before the AM‐MEE growth of 2H‐AlN thin films on Si(111), was studied to improve the crystallinity of AlN films. For the growth of high quality 2H‐AlN on Si(111), the optimization of growth of the DBL. The interface roughness of the DBL as a layer between two layers of AlN and Si, AlN/DBL/Si was characterized by grazing incidence X‐ray reflectivity (GIXR) and the surfaces were observed by AFM. Full width at half maximum (FWHM) of ω /2θ for 53.8 nm and 171.3 nm thickness AlN (0002) films were 12.1 arcmin and 7.1 arcmin, respectively. AFM images showed droplet free growth after the AM‐MEE and importance of the preparation of initial clean Si surface. Unifrom formation of DBL on a large size wafer of Si was available to use indirect exposure of N radical atoms. By increasing the thickness of the AlN the crystallinity was improved but the surface roughness of AlN did not depend on the thickness of the AlN films obtained by fitting results of GIXR curves. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)