High nitrogen content InGaAsN/GaAs single quantum well for 1.55μm applications grown by molecular beam epitaxy

Temperature-dependent optical properties of single quantum well with high nitrogen content for application grown by molecular beam epitaxy

“…To remove the defected caused by low-temperature growth, all samples were in situ annealed at 700 C for 10 min after GaAs cap layer was grown. Detailed MBE growth process has been described elsewhere [30].…”

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

“…Moreover, they exhibit a large offset of up to 450 meV between the conduction bands of the GaAs 1 À x N x (In y Ga 1 À y As 1 À x N x ) layers and the GaAs barrier [1,2]. Therefore, these alloys can potentially be used in long-wavelength optoelectronic devices such as laser diodes operating at high temperature for fiber optic communications at 1.3 and 1.55 mm [3,4]. Much work has been done [5][6][7] on the epitaxial growth and characterization of GaAs 1 À x N x and In yGa 1 À y As 1 À x N x alloys in order to control their optical bandgap and electrical properties by manipulating the alloy composition (In and N content).…”

Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x⩾3% grown by molecular beam epitaxy

“…The In 0.38 GaAsN x SQW samples are of x varying from 3% to 3.8%. The N content of the In 0.38 GaAsN x SQW was determined from the high-resolution X-ray diffraction measurement on thick GaAsN epitaxial layers grown under the same conditions of plasma power and light intensity, substrate temperature, and N 2 flow rate [10], by assuming that the N content is the same in the InGaAsN SQW.…”