Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate

Fujiwara, Atomu; Sato, Yuichi

doi:10.1063/1.5014994

Cited by 7 publications

(3 citation statements)

References 27 publications

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“…We also have tried to grow GaN-based nanopillar crystals directly on several non-single-crystalline substrates. [26][27][28] However, these substrates also have some shortcomings, such as quartz glass does not have electrical conductivity, and the thermal expansion coefficient of Ti and GaN is relatively large. These are not conducive to the growth of GaN and the fabrication of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates

Xue,

Taniguchi,

Oridate

et al. 2023

Jpn. J. Appl. Phys.

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In our past research, Group-III nitride nanopillar crystals were grown vertically on the multi-crystalline silicon substrate and applied to surface-emitting LEDs. To discuss the further possibilities of this kind of LEDs, such as application in deep visible, Mg-doped GaN and InGaN as important parts of the LEDs were grown under various conditions. Different testing experiments were carried out on these GaN-related samples to clarify their surface morphologies and luminescence characteristics. It was confirmed that Mg was successfully doped into GaN grown on the multi-crystalline silicon substrate. InGaN with a wide range of In-contents was obtained by using the same substrate. It is believed that these materials can be applied to various optoelectronic devices, especially large-area light-emitting devices with emissions of more colors, by analyzing the various properties.

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Section: Introductionmentioning

confidence: 99%

Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates

Xue,

Taniguchi,

Oridate

et al. 2023

Jpn. J. Appl. Phys.

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“…[26][27][28] Recently our group has grown GaN-based nanopillar-shaped-crystals on a multicrystalline Si substrate, and confirmed that the nanopillarcrystalline film yields a good optical property. 29) Since multicrystalline Si wafers manufactured by the casting method have been widely utilized for solar cells of low cost, various sizes and conductivities, the selection is advantageous to produce novel low cost and large-area GaN-based devices.…”

mentioning

confidence: 99%

“…The aim of the present investigation is thus to find any unique microstructural feature which could account for the good optical property reported elsewhere. 29) This paper focuses on the description of the microstructure of the GaN film grown on a multicrystalline Si substrate, especially on the nanopillar-shaped grain textures and lattice defects observable by transmission electron microscope (TEM).…”

mentioning

confidence: 99%

TEM study of GaN-based nanopillar-shaped-crystals grown on a multicrystalline Si substrate

Sato

Saito

Sato

et al. 2019

Jpn. J. Appl. Phys.

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A gallium nitride-based thin film is grown on a multicrystalline Si substrate by a molecular beam epitaxy apparatus. The microstructure of the crystalline film is closely examined by transmission electron microscopy (TEM). It is revealed that the film is composed of nanopillar-shaped-crystal grains with their diameters of 100 nm and heights of 400 nm approximately. Each nanopillar-crystal grain is based on highly-ordered wurtzite crystal structure and strongly textured with its c-axis oriented perpendicular to the substrate surface. The TEM observations also evidence that there are two kinds of basal stacking faults widely distributed in the nanopillar-crystal.

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Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics

Xue,

Taniguchi,

Saito

et al. 2024

Physica Status Solidi (b)

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In a previous study, GaN‐based nanopillars are grown vertically on a multicrystalline Si substrate by inserting (In)GaN steering crystals. In addition, blue‐green and white light‐emitting diodes (LEDs) are prepared on this substrate for the first time using a double heterotype p–n junction. Herein, the emission‐color distribution characteristics of this type of LED are analyzed in depth, and a related luminescence principle is proposed. Each nanopillar plus an electrode is considered a nanopillar LED, and the emission color of each nanopillar LED is inferred. The indium distribution in the InGaN active region is predicted based on the luminous color and corresponding spectra. Simultaneously, the morphology of related materials, electrical properties of LEDs, and chromaticity coordinates of luminous colors are analyzed and discussed.

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Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate

Cited by 7 publications

References 27 publications

Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates

Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates

TEM study of GaN-based nanopillar-shaped-crystals grown on a multicrystalline Si substrate

Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics

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