Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics
Houyao Xue,
Shingo Taniguchi,
Tsubasa Saito
et al.
Abstract:In a previous study, GaN‐based nanopillars are grown vertically on a multicrystalline Si substrate by inserting (In)GaN steering crystals. In addition, blue‐green and white light‐emitting diodes (LEDs) are prepared on this substrate for the first time using a double heterotype p–n junction. Herein, the emission‐color distribution characteristics of this type of LED are analyzed in depth, and a related luminescence principle is proposed. Each nanopillar plus an electrode is considered a nanopillar LED, and the … Show more
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