Chapter 1 Introduction and Overview

Schlesinger, T. E.; James, R. B.

doi:10.1016/s0080-8784(08)62740-4

Cited by 12 publications

(3 citation statements)

References 43 publications

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“…As aluminium has a relatively low work function [26], it is a suitable candidate for fabricating Schottky devices on p-type silicon. However, various reports [27][28][29] show that the barrier height 𝜙 bp indeed changes with 𝜙 𝑚 but does not scale linearly as predicted by the Schottky-Mott model (C.1). The model proposed by Bardeen includes the presence of interface states, due to silicon dangling bonds at the surface.…”

Section: Schottky Barrier IV Characteristics In the Presence Of Inter...mentioning

confidence: 94%

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Giulio Villani,

Zhang,

Malik

et al. 2024

J. Inst.

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Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages over hybrid sensors, Monolithic Active Pixel Sensors (MAPS) fabricated in CMOS technology have been increasingly implemented in HEP experiments. In all cases, their use in higher radiation areas (HL-LHC and beyond) will require options to improve their radiation hardness and time resolution. These aspects demand a deep understanding of their radiation damage and reliable models to predict their behaviours at high fluences. As a first step, we fabricated several Schottky and n-on-p diodes, to allow a comparison of results and provide a backup solution for test devices, on 6 or 4-inch p-type silicon wafers with 50 μm epitaxial thickness and of doping concentration as they are normally used in HEP detectors and CMOS MAPS devices. In this paper, details of the design and fabrication process, along with test results of the fabricated devices before irradiation, will be provided. Additional test results on irradiated devices will be provided in subsequent publications.

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Section: Schottky Barrier IV Characteristics In the Presence Of Inter...mentioning

confidence: 94%

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Giulio Villani,

Zhang,

Malik

et al. 2024

J. Inst.

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“…Undoped semi-insulating (SI) gallium arsenide (GaAs) grown by the liquid encapsulated Czochralski (LEC) method appears to be one of the most promising materials for the fabrication of low-cost, fast and radiation-resistant detectors of charged particles and photons capable of operating at room temperature [1].…”

Section: Introductionmentioning

confidence: 99%

Simulation of the reverseI–Vcharacteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs

Boháček

Dubecký²,

Sekacova³

2007

Semicond. Sci. Technol.

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The reverse current-voltage (I-V) characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating gallium arsenide (SI GaAs) have been simulated using a modified thermionic field emission (TFE) model. In order to explain the charge-current transport, the effect of tunnelling and thermionic field emission together with the Schottky barrier lowering were considered taking into account the voltage drop on the quasi-neutral bulk region. The modified TFE model describes reverse I-V characteristics in the temperature range between 300 K and 360 K. An observed agreement between measured and simulated characteristics enabled us to determine the Schottky barrier height and specific resistance of the SI GaAs base from the theoretical simulation. The results of calculated resistivities are compared with resistivities determined by the van der Pauw method. The value of the Schottky barrier height is in good agreement with the previously published data. A much higher value of the calculated ohmic current compared to the current corresponding to the diode structure at a low bias/current region is revealed. A detected difference increases with increasing temperature. This fact led us to conclude that the current in the linear part of the I-V characteristics in the low bias region does not correspond to the ohmic transport, being linear; that is, in contradiction with the more generally considered view.

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“…Recently, there was a great amount of effort to fabricate Cd 1Àx Zn x Te crystals, with x in the range of 0.1-0.2, for the application of room temperature nuclear radiation detectors (see reviews [4]). One of the most critical requirements for this application is high electrical resistivity, greater than 10 9 O cm.…”

Section: Introductionmentioning

confidence: 99%

Composition–temperature–partial pressures data for Cd0.8Zn0.2Te by optical absorption measurements

2005

Journal of Crystal Growth

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Chapter 1 Introduction and Overview

Cited by 12 publications

References 43 publications

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Simulation of the reverseI–Vcharacteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs

Composition–temperature–partial pressures data for Cd0.8Zn0.2Te by optical absorption measurements

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