Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies
E. Giulio Villani,
Dengfeng Zhang,
Adnan Malik
et al.
Abstract:Strip and pixels sensors, fabricated on high resistivity
silicon substrate, normally of p-type, are used in detectors
for High Energy Physics (HEP) typically in a hybrid detector
assembly. Furthermore, and owing to their inherent advantages over
hybrid sensors, Monolithic Active Pixel Sensors (MAPS) fabricated in
CMOS technology have been increasingly implemented in HEP
experiments. In all cases, their use in higher radiation areas
(HL-LHC and beyond) will require options to improve their radiat… Show more
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