Composition–temperature–partial pressures data for Cd0.8Zn0.2Te by optical absorption measurements

Melt growth of high-resistivity CdZnTe crystals by controlling Cd over-pressures

“…Fig. 3 plots the measured partial pressure of Cd, P Cd , against 1000/T, or the three-phase curve of Cd over the Cd 0.8 Zn 0.2 Te alloy [8]. The straight line runs from the top-left to the lowerright is the vapor pressure of pure Cd.…”

“…The two segments were divided by the solidus temperature of Cd 0.8 Zn 0.2 Te, 1115 1C. The symbols were the experimental points of P Cd measured over four samples of different compositions [8]. Also shown are the environments of the CZT-26 and -29 ingots, shown as solid and open boules, respectively, relative to the three-phase diagram.…”

“…[8], the partial pressures of Te 2 and Cd over the Cd 0.8 Zn 0.2 Te alloy between 485 and 1160 1C were determined by measuring the optical density of the vapor phase co-existing with the condensed phase (or phases) in the frequency range of ultra-violet to visible and the corresponding three-phase curve as well as the x Te -T-P Te , composition-temperature-partial pressures, data were established. The curves indicate that the partial pressures of Te 2 and Cd over the melt at the liquidus temperature of 1145 1C differ by 3 orders of magnitude, i.e., 2 Â 10 À 3 atm for Te 2 versus 1.8 atm for Cd.…”

“…The Cd three-phase curve for Cd 0.80 Zn 0.20 Te[8] and the stoichiometric positions for CZT-26 and CZT-29 during post-growth cooling.…”

Energy band gap, intrinsic carrier concentration, and Fermi level of CdTe bulk crystal between 304 and 1067K

“…[15][16][17][18][19] The instrument has also been used to measure the optical transmission of a GaN single crystal between 293 and 1237 K to determine its band gap as a function of temperature. [15][16][17][18][19] The instrument has also been used to measure the optical transmission of a GaN single crystal between 293 and 1237 K to determine its band gap as a function of temperature.…”