Abstract:Compositionally graded layers of GaAs1−xPx grown on (100) planes of GaAs substrates were investigated as a function of the distance t from the substrate, using a 77 °K cathodoluminescence technique. It was found that luminescence intensity L of these layers was strongly dependent on the profile of the compositional gradient, dx/dt. A number of the nonradiative recombination centers are three−dimensionally distributed in the shape of a cross−grid. This is related to misfit dislocations associated with impuritie… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.