Some features of minority carrier transport and radiative recombination in semiconductor AlxGa1−xAs structures with varying band‐gap are given. The behaviour of the distribution of the basic electrical and physical parameters in the bulk of a semiconductor is shown to be determined by the rate of band‐gap change along the coordinate. The dependence of the rate of radiative recombination on the band‐gap variation law is found.
Results are given of the investigation of the distribution of photo-generated charge carriers in semiconductor structures where the band-gap, E,, varies with the position, z, in a nonlinear manner. Semiconductor structures which band-gap monotonically decreases with the position according to a quadratic and exponential law are considered, as well as structures where E,(z) has a local extremum. A possible application of the nonlinear band-gap semiconductor in optoelectronic devices is discussed. IIpeacTasneHbi pe3ynb~a~b1 TeopeTmecI-Eoro nccnenosaHciR pacnpeneneam Hocmeneii 3apHna, reHepHp0BaHHbIX CBeTOM B llOJlYllPOBOnHHHOBbIX CTpyKTypaX, IHllpllHa 3alIpeWeHHOfi 30HbI E, RBJIReTCR HeJlllHefiHOfi @YHKqEl& OT HOOp@iHaTbI 2. PaCcMaTpH-BaIOTCII IlOJIyIIpOBO~HHKOBbIe CTpYKTYpbI, WllpklHa 3allpelLleHHOfi 30HbI B HOTOPbIX MOHO-TOHHO yMeHbLUaeTCII BnOJIb KOOPAHHaTbI IIO KBaApaTH4HOMY II 3KCllOHeH~MaJIbHOMY 3aHOHY, a TaIERCe CTPYKTYPbI, rne E,(Z) MMeI OT JlOKaJlbHbIfi 3KCTpeMYM. 06CYWAaeTCR B03MOECHOe IIpllMeHeHHe IIOnyIIpOBO~HMHOB C HeJlHHefiHbIM I13MeHeHHeM IHllPIlHbI 3aIIpeWeHHOfi 30HbI npkI KOHCTpYllpOBaHYrl4 OlIT03JleKTpOHHbIX npH60pOB.
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