Minority Carrier Transport and Radiative Recombination in AlxGa1−xAs Variable-Composition Structures

Osinskii, V. I.; Малышев, С. А.; Ryzhkov, M. P.

doi:10.1002/pssa.2210740103

Cited by 2 publications

(1 citation statement)

References 6 publications

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“…s, L (oc) Sf which follows from (5) and (6). However, the measurements of AS' : (OC) a n d Sf are not possible immediately, because these signals occur a t the same photon energy.…”

Section: Ziiterlial Qztaiitrcm Yield Q H ~mentioning

confidence: 99%

Determination of the Internal Quantum Yield and of the Injection Efficiency of Bed-Light Emitting (Al, Ga)As-DHS Diodes

Thielemann

Rheinländer

Nevermann

et al. 1989

Phys. Stat. Sol. (a)

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The internal quantum yield of the active layer and the efficiency of the minority‐carrier injection into the active layer of red‐light emitting (Al, Ga)As double heterostructure diodes are determined by measurements of the photocurrent, the photoluminescence of the active layer as well as of the substrate, and the photoinduced injection luminescence. With use of the values of the internal quantum yield the values of the external quantum yield are derived.

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“…s, L (oc) Sf which follows from (5) and (6). However, the measurements of AS' : (OC) a n d Sf are not possible immediately, because these signals occur a t the same photon energy.…”

Section: Ziiterlial Qztaiitrcm Yield Q H ~mentioning

confidence: 99%

Determination of the Internal Quantum Yield and of the Injection Efficiency of Bed-Light Emitting (Al, Ga)As-DHS Diodes

Thielemann

Rheinländer

Nevermann

et al. 1989

Phys. Stat. Sol. (a)

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Photo-Generated Carriers in Structures with Nonlinear Band-Gap Changes

Osinskii

Малышев

Melnikov

et al. 1985

phys. stat. sol. (a)

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Results are given of the investigation of the distribution of photo-generated charge carriers in semiconductor structures where the band-gap, E,, varies with the position, z, in a nonlinear manner. Semiconductor structures which band-gap monotonically decreases with the position according to a quadratic and exponential law are considered, as well as structures where E,(z) has a local extremum. A possible application of the nonlinear band-gap semiconductor in optoelectronic devices is discussed. IIpeacTasneHbi pe3ynb~a~b1 TeopeTmecI-Eoro nccnenosaHciR pacnpeneneam Hocmeneii 3apHna, reHepHp0BaHHbIX CBeTOM B llOJlYllPOBOnHHHOBbIX CTpyKTypaX, IHllpllHa 3alIpeWeHHOfi 30HbI E, RBJIReTCR HeJlllHefiHOfi @YHKqEl& OT HOOp@iHaTbI 2. PaCcMaTpH-BaIOTCII IlOJIyIIpOBO~HHKOBbIe CTpYKTYpbI, WllpklHa 3allpelLleHHOfi 30HbI B HOTOPbIX MOHO-TOHHO yMeHbLUaeTCII BnOJIb KOOPAHHaTbI IIO KBaApaTH4HOMY II 3KCllOHeH~MaJIbHOMY 3aHOHY, a TaIERCe CTPYKTYPbI, rne E,(Z) MMeI OT JlOKaJlbHbIfi 3KCTpeMYM. 06CYWAaeTCR B03MOECHOe IIpllMeHeHHe IIOnyIIpOBO~HMHOB C HeJlHHefiHbIM I13MeHeHHeM IHllPIlHbI 3aIIpeWeHHOfi 30HbI npkI KOHCTpYllpOBaHYrl4 OlIT03JleKTpOHHbIX npH60pOB.

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Minority Carrier Transport and Radiative Recombination in AlxGa1−xAs Variable-Composition Structures

Cited by 2 publications

References 6 publications

Determination of the Internal Quantum Yield and of the Injection Efficiency of Bed-Light Emitting (Al, Ga)As-DHS Diodes

Determination of the Internal Quantum Yield and of the Injection Efficiency of Bed-Light Emitting (Al, Ga)As-DHS Diodes

Photo-Generated Carriers in Structures with Nonlinear Band-Gap Changes

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