The spectral dependence of the coefficient of photoelectric crosstalk between photosensitive elements in silicon diffused photodiode and phototransistor linear arrays is studied. The physical mechanisms causing the crosstalk are analyzed for different spectrum regions. A model is proposed which allows the calculation of the crosstalk value for the visible spectrum region.

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Some features of minority carrier transport and radiative recombination in semiconductor AlxGa1−xAs structures with varying band‐gap are given. The behaviour of the distribution of the basic electrical and physical parameters in the bulk of a semiconductor is shown to be determined by the rate of band‐gap change along the coordinate. The dependence of the rate of radiative recombination on the band‐gap variation law is found.

Structural perfection are studied of GaAs selective regions as grown in Si substrate windows on (100) and (111) GaAs nucleation wafers. The dislocation density distributions across the thickness and over the surface of 300 × 300 μm2 epitaxially grown selective regions are determined. The dislocation density on the selective (100) wafer‐grown region surfaces is shown to be some 1.5 to 2 orders of magnitude lower than that of the nucleation wafer, and an order of magnitude lower as compared with continuous epitaxial layers. An expression is given which describes the proposed model of dislocation density reduction across the thickness of epitaxial selective regions. It is found that the maximum density is observed at the centre of the selective region. Away from the centre, the density reduces and at a distance of some tens of microns, i.e. at the selective region edge, there are practically no dislocations.