Carry Chains for Ultra High-Speed SiGe HBT Adders

Gutin, A.; Philip, J.; Chu, Michael; Belemjian, Paul M.; LeRoy, Mitchell R.; Kraft, R.P.; McDonald, J. F.

doi:10.1109/tcsi.2011.2112850

Cited by 9 publications

(5 citation statements)

References 30 publications

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“…Graphene can find applications in EHF digital circuits in which large charge carrier mobility leads to high operating speed, which could be traded off against power dissipation, reduced voltage swing, and circuit complexity. ,− However, before graphene can be considered as a replacement for InP heterojunction bipolar transistors in EHF applications, further technological advances are needed. The inverter delay in the fabricated ROs with L = 1 μm is τ ≈ 100 ps, which is similar to that of Si CMOS inverters at the same gate length .…”

Section: Resultsmentioning

confidence: 99%

Gigahertz Integrated Graphene Ring Oscillators

et al. 2013

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Ring oscillators (ROs) are the most important class of circuits used to evaluate the performance limits of any digital technology. However, ROs based on low-dimensional nanomaterials (e.g., 1-D nanotubes, nanowires, 2-D MoS2) have so far exhibited limited performance due to low current drive or large parasitics. Here we demonstrate integrated ROs fabricated from wafer-scale graphene grown by chemical vapor deposition. The highest oscillation frequency was 1.28 GHz, while the largest output voltage swing was 0.57 V. Both values remain limited by parasitic capacitances in the circuit rather than intrinsic properties of the graphene transistor components, suggesting further improvements are possible. The fabricated ROs are the fastest realized in any low-dimensional nanomaterial to date and also the least sensitive to fluctuations in the supply voltage. They represent the first integrated graphene oscillators of any kind and can also be used in a wide range of applications in analog electronics. As a demonstration, we also realized the first stand-alone graphene mixers that do not require external oscillators for frequency conversion. The first gigahertz multitransistor graphene integrated circuits demonstrated here pave the way for application of graphene in high-speed digital and analog circuits in which high operating speed could be traded off against power consumption.

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Section: Resultsmentioning

confidence: 99%

Gigahertz Integrated Graphene Ring Oscillators

et al. 2013

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“…1161 ECL gates are at the core of the fastest SiGe and InP bipolar-CMOS (BiCMOS) or heterojunction bipolar transistor (HBT) chips and are used for digital signal processing at ultra-high frequencies ( f > 100 GHz), 1169 inaccessible with conventional state-of-the-art CMOS technology. They are used in high-speed integer arithmetic units, 1170 static ultra-high frequency dividers, 1171 high data rate (>50 Gb s −1 ) serial communication systems for demultiplexing (i.e. extracting the original channels on the receiver side) 1172 and phase detection for clock and data signal recovery.…”

Section: Graphene-based Microelectronics and Nanoelectronicsmentioning

confidence: 99%

“…GROs and inverters could find applications in digital circuits operating at extremely high frequency (EHF; f > 100 GHz) in which high operating speed could be traded off against power dissipation, reduced voltage swing, and circuit complexity 1170,1172,1173,1216 These ultra-high speed digital circuits were developed to perform data conversion at the transmitting/ receiving side of serial EHF lines, 1217 such that information carried by EHF digital signals can be processed at lower clock rates by low-power, highly integrated, and parallel Si CMOS logic. 1217 The EHF digital circuits are used in wireless, fiberoptic, and space communications.…”

Section: High Frequency Electronicsmentioning

confidence: 99%

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

et al. 2015

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We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

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“…ECL gates are at the core of the fastest SiGe bipolar-CMOS (BiCMOS) or InP heterojunction bipolar transistor (HBT) chips and are used for digital signal processing at extremely high frequencies (EHFs; f > 100 GHz) which are inaccessible with conventional state-of-the-art CMOS technology. For example, they are used in high-speed integer arithmetic units, static EHF dividers, high data rate (>50 Gb/s) serial communication systems for demultiplexing, and phase detection for clock and data signal recovery. , …”

mentioning

confidence: 99%

Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions

et al. 2012

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The fundamental building blocks of digital electronics are logic gates which must be capable of cascading such that more complex logic functions can be realized. Here we demonstrate integrated graphene complementary inverters which operate with the same input and output voltage logic levels, thus allowing cascading. We obtain signal matching under ambient conditions with inverters fabricated from wafer-scale graphene grown by chemical vapor deposition (CVD). Monolayer graphene was incorporated in self-aligned field-effect transistors in which the top gate overlaps with the source and drain contacts. This results in full-channel gating and leads to the highest low-frequency voltage gain reported so far in top-gated CVD graphene devices operating in air ambient, A(v) ∼ -5. Such gain enabled logic inverters with the same voltage swing of 0.56 V at their input and output. Graphene inverters could find their way in realistic applications where high-speed operation is desired but power dissipation is not a concern, similar to emitter-coupled logic.

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Carry Chains for Ultra High-Speed SiGe HBT Adders

Cited by 9 publications

References 30 publications

Gigahertz Integrated Graphene Ring Oscillators

Gigahertz Integrated Graphene Ring Oscillators

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Cascading Wafer-Scale Integrated Graphene Complementary Inverters under Ambient Conditions

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