Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Ferrari, Andrea C.; Bonaccorso, Francesco; Fal’ko, Vladimir I.; Новоселов, К. С.; Roche, Stephan; Bøggild, Peter; Borini, Stefano; Koppens, Frank H. L.; Palermo, Vincenzo; Pugno, Nicola; Garrido, José Antonio; Sordan, Roman; Bianco, Alberto; Ballerini, Laura; Prato, Maurizio; Lidorikis, Elefterios; Kivioja, Jani; Marinelli, C.; Ryhänen, Tapani; Morpurgo, Alberto F.; Coleman, Jonathan N.; Nicolosi, Valeria; Colombo, Luigi; Fert, A.; Garcia-Hernandez, M.; Bachtold, Adrian; Schneider, Grégory F.; Guinea, F.; Dekker, Cees; Barbone, Matteo; Sun, Zhipei; Galiotis, Costas; Григоренко, А. Н.; Konstantatos, Gerasimos; Kis, András; Katsnelson, M. I.; Vandersypen, L. M. K.; Loiseau, Annick; Morandi, Vittorio; Neumaier, Daniel; Treossi, Emanuele; Pellegrini, Vittorio; Polini, Marco; Tredicucci, Alessandro; Williams, Gareth; Hong, Byung Hee; Ahn, Jong Hyun; Kim, Jong Min; Zirath, Herbert; Wees, B. J. van; Zant, Herre van der; Occhipinti, Luigi G.; Matteo, Andrea Di; Kinloch, Ian A.; Seyller, Thomas; Quesnel, Etienne; Feng, Xinliang; Teo, K. B. K.; Rupesinghe, N. L.; Hakonen, Pertti; Neil, Simon R. T.; Tannock, Quentin; Löfwander, Tomas; Kinaret, Jari M.

doi:10.1039/c4nr01600a

Cited by 2,535 publications

(1,926 citation statements)

References 2,129 publications

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“…At the edge of the monolayer Al 2 O 3 was deposited which we attribute to dangling bonds and defects that are more reactive. This high selectivity in the deposition process was found in both both WS 2 and MoS 2 single crystals grown via CVD. This is to our knowledge the first observation of selective chemical behaviour between mono-and doublelayered or multilayered TMDs.…”

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confidence: 73%

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

et al. 2015

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This commmunication presents a study of atomic layer deposition of Al 2 O 3 on transition metal dichalcogenide (TMD) two-dimensional films which is crucial for use of these promising materials for electronic applications. Deposition of Al 2 O 3 on pristine chemical vapour deposited MoS 2 and WS 2 crystals is demonstrated. This deposition is dependent on the number of TMD layers as there is no deposition on pristine monolayers. In addition, we show that it is possible to reliably seed the deposition, even on the monolayer, using non-covalent functionalisation with perylene derivatives as anchor unit.The integration of transition metal dichalcogenides (TMDs) into existing semiconductor technology is of major interest. 1,2 The synthesis of these materials has been vastly improved over the last few years and many possible devices have been proposed and realised. [3][4][5][6] But to finally achieve their large-scale integration and production, it is necessary to make TMDs fully CMOS processable. One prerequisite for this is the deposition of subsequent layers on top of the TMD for gating and passivation as the performance and stability of TMD based devices hugely depends on their dielectric environment. This task is nontrivial as any impact on the surface of the TMD will result in the destruction of its electronic properties. It has been shown that encapsulation of the 2D material by mechanical deposition of hexagonal boron nitride results in the best preservation of its electronic properties but this approach is not scalable. 7 Other frequently used deposition methods for oxides such as sputtering or plasma-enhanced chemical vapour deposition (PECVD) are not suitable as their application will cause damage to the monolayer.Atomic layer deposition (ALD) is a mild and highly precise technique for thin film deposition, mainly used for depositing gate oxides in integrated circuits. 8 The most common ALD process is the deposition of Al 2 O 3 from alternating exposures of trimethylaluminium (TMA, Al(CH 3 ) 3 ) and water according to the reaction: 9 2Al(CH 3 ) 3 + 3H 2 O -Al 2 O 3 + 6CH 4 DH = À376 kcal This reaction is thermodynamically highly favourable and works over a large range of temperatures with temperatures between 33 1C and 500 1C demonstrated, making it very reliable and common in the silicon and III-V semiconductor industries. 10,11 However, in the initial step the TMA needs a surface hydroxyl group with which it reacts and the lack of such groups on the TMD's basal plane makes starting the deposition non-trivial; a challenge also encountered with graphene. [12][13][14][15] Using ozone instead of water may prove harmful to the oxidation-sensitive TMD layers, though there have been some recent successes. 16 An initial, purely adsorptionbased deposition can be achieved but tends to be dependent on temperature and other factors like underlying electronic structure and is therefore often not entirely reproducible; it has been shown several times that studies may not reproduce results under apparently similar condit...

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confidence: 73%

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

et al. 2015

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“…Two-dimensional (2D) crystals, including graphene, hexagonal boron nitride and transition metal dichalcogenides (TMD), have outstanding properties for developing the next generation of electronic devices [1][2][3][4][5][6][7] . Their extreme thinness, down to a single layer, allows almost perfect electrostatic control of the transistor channel, making them robust to short channel effects and ideal for low power applications 8 .…”

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confidence: 99%

High-Performance WSe₂ Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

et al. 2015

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Due to their extraordinary structural and electrical properties, two dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe 2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (~38) and small static power (Pico-Watts), paving the way for low power electronic system in 2D materials.

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“…In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration, is EA=0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.Keywords: quasi-1D materials; van der Waals materials; low-frequency noise; interconnects 2 | P a g e The investigations of the two-dimensional layers and heterostructures revealed new physics and demonstrated promising applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Starting with graphene [3][4][5], and spreading to a wide range of layered van der Waals materials [6][7][8][9][10], successful isolation of individual atomic layers from their respective bulk crystals by mechanical exfoliation led to the fast growing research activities in the 2D materials.…”

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Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires

et al. 2016

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We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3 capped with quasi-2D h-BN layers. Semi-metallic TaSe3 is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I 2 , compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f 2 -type as temperature increases to ~400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals we determined that the noise activation energy for quasi-1D TaSe3 nanowires is approximately EP≈1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration, is EA=0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semi-metals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.Keywords: quasi-1D materials; van der Waals materials; low-frequency noise; interconnects 2 | P a g e The investigations of the two-dimensional layers and heterostructures revealed new physics and demonstrated promising applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Starting with graphene [3][4][5], and spreading to a wide range of layered van der Waals materials [6][7][8][9][10], successful isolation of individual atomic layers from their respective bulk crystals by mechanical exfoliation led to the fast growing research activities in the 2D materials. In contrast to the layered van der Waals materials that yield 2D crystals, materials, such as TaSe3 and TiS3 [15][16][17] yield the quasi-onedimensional (1D) van der Waals crystal structures. These materials belong to the group of the transition metal trichalcogenides MX3 (where M = Mo, W, and other transition metals; X = S, Se, Te). In the monoclinic crystal structure of TaSe3, the trigonal prismatic TaSe3 units form continuous chains extending along the b axis and leading to fiber-and needle-like crystals with anisotropic semi-metallic or metallic properties. The quasi-1D atomic threads are weakly bound in bundles by the van der Waals forces. As a consequence, the mechanical exfoliation of the MX3 crystals results not in the 2D layers but rather in the quasi-1D van der Waals nanowires. We have recently demonstrated quasi-1D TaSe3 nanowires with the record high current density exceeding JB~10 MA/cm 2 , which is an order of magnitude larger than that for the Cu interconnects [18].In this Letter, we report on the excess low-frequency electronic noise in quasi-1D nanowires of TaSe3 capped with the quasi-2D h-BN layers. The h-BN capping was used as a surface passivation protecting from environmental exposure. The measuremen...

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Cited by 2,535 publications

References 2,129 publications

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

High-Performance WSe₂ Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires

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Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Cited by 2,535 publications

References 2,129 publications

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layers

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires

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Product

Resources

About

High-Performance WSe₂ Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

Low-Frequency Electronic Noise in Quasi-1D TaSe₃ van der Waals Nanowires