Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes

Sizov, D. S.; Bhat, R.; Zakharian, Aramais R.; Song, Kechang; Allen, Donald E.; Coleman, Sean; Zah, Chung−En

doi:10.1109/jstqe.2011.2116770

Cited by 59 publications

(32 citation statements)

References 40 publications

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“…We restrict the discussion to blue-emitting SQW structures to minimize potential issues with carrier transport. In addition, the relatively low band offsets in this wavelength range and the SQW structure ensure the validity of the drift-diffusion model [26], [27]. Fig.…”

Section: A Energy Band Diagramsmentioning

confidence: 80%

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Feezell

Speck

DenBaars

et al. 2013

J. Display Technol.

323

155

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This work examines the effects of polarization-related electric fields on the energy band diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum wells on various crystal orientations, including polar (0001) ( -plane), semipolar 2021 , semipolar 2021 , and nonpolar 1010 ( -plane). Based on simulations, we show that the semipolar 2021 orientation exhibits excellent potential for the development of high-efficiency, low-droop light-emitting diodes (LEDs). We then present recent advancements in crystal growth, optical performance, and thermal performance of semipolar 2021 LEDs. Finally, we demonstrate a low-droop, high-efficiency single-quantum-well blue semipolar 2021 LED with an external quantum efficiency of more than 50% at 100 A/cm .

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Section: A Energy Band Diagramsmentioning

confidence: 80%

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Feezell

Speck

DenBaars

et al. 2013

J. Display Technol.

323

155

View full text Add to dashboard Cite

show abstract

“…The compressive strain causes a larger piezoelectric component to the polarization-related electric field in the quantum well which has been shown to significantly affect carrier transport. 20 We define the turn-on of the device in forward bias at 20 A/cm 2 which is a relevant current density regime for LED operation. Forward bias refers to a positive bias on the free surface while the bottom contact is grounded, in the same orientation as defined for typical LED testing.…”

Section: A Quantum Well Depth and Numbermentioning

confidence: 99%

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

Browne

Mazumder

et al. 2015

Journal of Applied Physics

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Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxyUnipolar-light emitting diode like structures were grown by NH 3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In 0.14 Ga 0.86 N and In 0.19 Ga 0.81 N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schr€ odinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models. V C 2015 AIP Publishing LLC.

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“…This range of mobility corresponds to the diffusion time of 35 ps to 1.9 ps in the SCH layer. The reported values of escape times in InGaN/GaN MQW are several wide range [17,[46][47][48], so, in this work it is assumed to be at the range of 0.35-35 ns. The typical capture times range for QW lasers is 0.3-0.5 ps [49,50], but for InGaN/GaN MQWs have been reported in the range 0.4-0.8 ps by cw-photoluminescence spectroscopy [17,[51][52][53].…”

Section: Theoretical Modelmentioning

confidence: 99%

The effects of carrier transport phenomena on the spectral and power characteristics of blue superluminescent light emitting diodes

Milani

Asgari

2015

Physica E: Low-dimensional Systems and Nanostructures

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Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes

Cited by 59 publications

References 40 publications

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

The effects of carrier transport phenomena on the spectral and power characteristics of blue superluminescent light emitting diodes

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