Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Feezell, Daniel; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

doi:10.1109/jdt.2012.2227682

Cited by 323 publications

(165 citation statements)

References 45 publications

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“…45,46 Generally, the much smaller droop of nonpolar and semipolar LEDs in comparison with polar LEDs has been attributed to the weaker polarization fields. [30][31][32][33]47,48 However, it should be noted that low-efficiency polar LEDs also show a relatively small droop, 35,36 which has been attributed mainly to the strong effect of non-radiative recombination processes. Recently, Davies et al 49 have suggested that the droop is inherent to the carrier density in InGaN QW structures and independent of crystal orientation.…”

Section: Resultsmentioning

confidence: 99%

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Dinh

Corbett

Parbrook

et al. 2016

Journal of Applied Physics

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We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (112¯2) GaN substrate (Bulk-GaN) and a low-cost large-size (112¯2) GaN template created on patterned (101¯2) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼105 cm−2–106 cm−2 and basal-plane stacking fault (BSF) density of 0 cm−1, while the PSS-GaN substrate has the TDD of ∼2 × 108 cm−2 and BSF density of ∼1 × 103 cm−1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.

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Section: Resultsmentioning

confidence: 99%

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Dinh

Corbett

Parbrook

et al. 2016

Journal of Applied Physics

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“…The development of InGaN/GaN quantum well (QW) based violet-blue-green light-emitting diodes (LEDs) [1][2][3][4][5][6] and laser diodes (LDs) [7][8][9][10] enables efficient solid-state lighting (SSL) technology for a wider range of applications, such as general illumination, automotive lighting, display and horticulture [11,12]. Besides, the utilization of III-nitride LEDs and LDs as the transmitter for free-space visible light communications (VLC) and underwater wireless optical communications (UWOC) has been demonstrated and investigated recently [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

“…Table 1 summarizes the design and performance of the demonstrated GaN-based SLDs, comparing the emission wavelength, substrate material, configuration, waveguide design, and the maximum light output power reported in each case. 405 nm c-GaN "j-shape" waveguide curved ridge 350 mW (cw) [24] 408 nm c-GaN "j-shape" waveguide "j-shape" ridge 200 mW (cw) [25] 410 ~ 445 nm c-GaN tilted waveguide 2 µm ridge 30 ~ 55 mW (cw) [26] 420 nm c-GaN tilted facet 2 µm ridge 2 mW (cw) 100 mW (pulse) [27] 420 nm c-GaN "j-shape" waveguide AR/HR coating 3 µm ridge 200 mW (cw) [28] 439 nm m-GaN facet roughening 4 µm ridge 5 mW (pulse) [29] 443 nm c-GaN curved waveguide 2 µm ridge 100 mW (cw) [30] 445 nm c-GaN oblique facet 5 µm ridge - [31] 447 nm Semipolar GaN passive absorber 7.5 µm ridge 256 mW (cw) [17] 500 nm c-GaN curved waveguide 2 µm ridge 4 mW (pulse) [32] Since most of InGaN/GaN QW SLDs are grown on a polar, c-plane GaN substrate, there is a growing interest to develop high efficient violet-blue SLDs on nonpolar or semipolar substrates owing to a reduced polarization field presented in the QW structure [2]. Studies on semipolar and nonpolar GaN-based LEDs and LDs have revealed that the enhanced electron and hole wavefunction overlap is expected for InGaN/GaN QWs grown on nonpolar (m-plane) and semipolar GaN substrates, leading to an enhanced internal quantum efficiency [2,3].…”

Section: Introductionmentioning

confidence: 99%

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

Shen

Lee

et al. 2017

SPIE Proceedings

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III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the "efficiency droop" effect and the high-speed performance is limited by a relatively small -3 dB modulation bandwidth (<100 MHz). InGaN-based LDs were recently studied as a droop-free, high-speed emitter; yet it is associated with speckle-noise and safety concerns. In this paper, we presented the semipolar InGaN-based violet-blue emitting superluminescent diodes (SLDs) as a high-brightness and high-speed light source, combining the advantages of LEDs and LDs. Utilizing the integrated passive absorber configuration, an InGaN/GaN quantum well (QW) based SLD was fabricated on semipolar GaN substrate. Using SLD to excite a YAG:Ce phosphor, white light can be generated, exhibiting a color rendering index of 68.9 and a color temperature of 4340 K. Besides, the opto-electrical properties of the SLD, the emission pattern of the phosphor-converted white light, and the high-speed (Gb/s) visible light communication link using SLD as the transmitter have been presented and discussed in this paper.

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“…However, the micro LED design needs more improvement for practical solid-state lighting due to its low power and potentially issues with pixel-control. Furthermore, LEDs suffer a loss in external quantum efficiency (EQE) as operating current increases, commonly known as "efficiency droop" [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system

et al. 2015

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El-Desouki, Munir M.; Speck, James S.; Nakamura, Shuji; Ooi, Boon S.; DenBaars, Steven P. Abstract:We demonstrate data transmission of unfiltered white light generated by direct modulation of a blue gallium nitride (GaN) laser diode (LD) exciting YAG:Ce phosphors. 1.1 GHz of modulation bandwidth was measured without a limitation from the slow 3.8 MHz phosphor response. A high data transmission rate of 2 Gbit/s was achieved without an optical blue filter using a non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. The measured bit error rate (BER) was less than the forward error correction (FEC) limit of 3.50 × 10 -3 . The generated white light exhibits CIE 1931 chromaticity coordinates of (0.3628, 0.4310) with a color rendering index (CRI) of 58 and a correlated color temperature (CCT) of 4740 K when the LD was operated at 300 mA. The demonstrated laserbased lighting system can be used simultaneously for indoor broadband access and illumination applications with good color stability. Kruglov, and O. Ziemann, "GaN-based miniaturized cyan light-emitting diodes on a patterned sapphire substrate with improved fiber coupling for very high-speed plastic optical fiber communication," IEEE Photonics J., 4(5), 1520-1529 (2012). 24. D. Tsonev, S. Videv, and H. Haas, "Towards a 100 Gb/s visible light wireless access network,"

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Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Cited by 323 publications

References 45 publications

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system

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