Carrier-Number-Fluctuation Induced Ultralow 1/<i>f</i> Noise Level in Top-Gated Graphene Field Effect Transistor

Peng, Songang; Jin, Zhi; Zhang, Dayong; Shi, Jingyuan; Mao, Dacheng; Wang, Shaoqing; Yu, Guanghui

doi:10.1021/acsami.6b15862

Cited by 25 publications

(31 citation statements)

References 29 publications

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“…Hence, a certain carrier variation in channel can shift the Fermi level of graphene much more significantly near the Dirac point. [ 7,36,45 ] As discussed previously, the epoxide functional group induced by the TMA/O 3 ALD deposition process can generate the trap sites at the interface between the graphene and top‐gate dielectric layer. Similar to the conventional semiconductor, the interface traps with the energy level over Dirac point of graphene are believed to the acceptors, while interface traps with energy level below the Dirac point are donors.…”

Section: Figurementioning

confidence: 99%

“…According to the former studies, less oxygen atoms are available during the ALD deposition of Al 2 O 3 layer. [34][35][36] Hence, due to the deficiency of the oxygen atoms in Al 2 O 3 layer, more positive charges are accumulated and dope the graphene into opposite polarity. In addition, the epoxide functional group at graphene surface induced by the TMA/O 3 ALD deposition process can act as the interface trap sites.…”

Section: Modulating the Electronic Property Of Graphene By Doping Is mentioning

confidence: 99%

“…The number of interfacial effective trap charge is determined by the position of the Fermi level of graphene, so its value is gate-bias dependent. [36][37][38] When the V TG sweeps from negative voltage regime, the Fermi level lies below the Dirac point energy. In this case, carrier transport in graphene channel is mainly affected by the donor interface traps.…”

Section: Modulating the Electronic Property Of Graphene By Doping Is mentioning

confidence: 99%

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Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering

Peng

Jin

Yao

et al. 2020

Adv Elect Materials

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Modulating the electronic property of graphene by doping is essential for its device and circuit applications. Unfortunately, controllable p‐ and n‐type doping in top‐gated graphene field effect transistor (GFET) is reported. Here, the O3‐based atomic layer deposited Al2O3 layer as top gate dielectric is chosen. The epoxide functional group formed in the O3 process serves as effective interface trap sites. As the sweeping range of top gate voltage increases, the Dirac point position of GFET moves from positive voltage to negative voltage. The shift of the Dirac point voltage indicates the doping transition of graphene from p‐type to n‐type. The gate voltage dependent doping can be attributed to the charge exchange between graphene and interface trap sites. Furthermore, a trap‐dependent charge model is proposed to explain the transport mechanism in the doping process. This approach is promising to produce the complementary p‐ and n‐type top‐gated GFET for multiple applications.

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Section: Figurementioning

confidence: 99%

Section: Modulating the Electronic Property Of Graphene By Doping Is mentioning

confidence: 99%

Section: Modulating the Electronic Property Of Graphene By Doping Is mentioning

confidence: 99%

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Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering

Peng

Jin

Yao

et al. 2020

Adv Elect Materials

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“…Figure 5a shows the drain current hysteresis behavior for the 7, 9, and 11 µm channel length GFETs at V DS = 0.1 V. The gate bias was swept from −60 to 60 V followed by 60 to −60 V, respectively. [37] Figure 5b shows the drain current hysteresis recorded for another 11 µm channel length GFET under gate bias sweeping rates (dV BG /dt) of 0.1, 1, and 10 V s −1 . [36] However, the Dirac point on the left-hand side of transfer curve seems to be not affected in the hysteresis measurement, indicating that the interfacial trap effect is not obvious in the channel region of the GFETs.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…However, the Dirac point on the left‐hand side of transfer curve seems to be not affected in the hysteresis measurement, indicating that the interfacial trap effect is not obvious in the channel region of the GFETs. This smaller Dirac point shift indicates that the lower density of trap sites in the channel region, which can be attributed to the elimination of oxygen/water‐related molecules around graphene induced by the oxidation process of Al seed layer . Figure b shows the drain current hysteresis recorded for another 11 µm channel length GFET under gate bias sweeping rates (d V BG /d t ) of 0.1, 1, and 10 V s −1 .…”

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confidence: 99%

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field‐Effect Transistors?

Peng

Jin

Zhang

et al. 2018

Adv Elect Materials

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electronics. [1][2][3][4][5] The cause of the amazing electronic properties of graphene is its unique line-up band structure, in which the valence and conduction bands meet in a single point at the Fermi level. This peculiar point is the so-called Dirac points and cones. [1] In graphene field-effect transistor (GFET), the channel conductance is modulated by the electric field from a back-or top-gate. The transfer characteristics, I DS -V GS curves typically display a V shape, with a hole-dominated conductance (p-branch) at lower V GS and electron type transport at more positive gate voltages (n-branch). The valley of the curves is the charge neutrality where the concentration of electron is equal to that of hole. This valley corresponds to the Dirac point in graphene band structure and quite important for electronic applications of graphene. For example, both the graphene frequency doubler and ambipolar mixer are biased at the Dirac point for their best performance. [6][7][8][9] In most case, only one unique Dirac point was found in the transfer characteristic of GFET. [10][11][12][13] Recently, several research groups found that the transfer characteristics in GFET show an additional minimum other than the major Dirac point, in other words, a doubledips curves. Nouchi and Tanigaki have found an anomalous distortion in GFET with ferromagnetic metal electrodes. [14] The transfer characteristics in these GFETs show two local minimal current points at hole branch. They attribute this phenomenon to the oxide layer induced weaker pinning of charge density at the metal contacts. Brenner and Murali have utilized hydrogen silsesquoxane film to partially cover the graphene channel, which leads to the different doping levels in channel region and a formation of p-n junction. An additional minimum conductance other than the Dirac point can also be observed in this GFET. [15] Chiu et al. found that an additional dip will appear on the left-hand side of the original Dirac point in I DS -V BG curve in the high field regime. They claim that this double dip structure can be attributed to the formation of a p-n junction in drain region, which is induced by the trapped charge doping under high bias conditions. [16] Bartolomeo et al. show that a double Dirac point can also been achieved while keeping the drain bias very low (20 mV). They have clarified that the double Dirac point is related to charge transfer between graphene and metal contact and that it is enhanced by the charge storage at The Dirac point(s) in graphene field-effect transistors (GFETs) are of great importance for electronic application. However, the lack of the effective means to distinguish the electrical properties of graphene at the contact and channel regions limits a clear understanding of their contributions to the Dirac point(s). A method, which can characterize the electrical properties of graphene under metal contact and in the channel, is developed, respectively. It is found that the Fermi levels of graphene at the contact and channel regions are quite ...

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The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor

et al. 2021

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Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

Cited by 25 publications

References 29 publications

Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering

Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering

How Do Contact and Channel Contribute to the Dirac Points in Graphene Field‐Effect Transistors?

The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor

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