The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor

Peng, Songang; Jin, Zhi; Zhang, Dayong; Shi, Jingyuan; Niu, Jiebin; Zhu, C.Y.; Zhang, Yanhui; Yu, Guanghui

doi:10.1002/adem.202100935

Cited by 14 publications

(11 citation statements)

References 49 publications

(81 reference statements)

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“…As a result, the V Dirac is shifted to the negative direction. In order to deepen the understanding of the electrical properties of GFET from p-type doping to n-type doping, their resistance profiles (R T ) can be fitted to the expression [28,29]:…”

Section: Resultsmentioning

confidence: 99%

“…In our GFET, the graphene under the metal contact will be p-type doped [16,17,30]. When the Fermi level of graphene in channel region is moved upward neural point by the top gate electric field, the p-n junction will be formed between channel and contact region [29,30]. The p-n junction will increase the metal/graphene contact resistance and therefore enhance the value of R S .…”

Section: Resultsmentioning

confidence: 99%

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Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene

et al. 2022

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The top-gated graphene field effect transistor (GFET) with electric-field induced doping polarity conversion has been demonstrated. The polarity of channel conductance in GFET can be transition from p-type to n-type through altering the gate electric field scanning range. Further analysis indicates that this complementary doping is attributed to the charge exchange between graphene and interface trap sites. The oxygen vacancies in Al2O3filmare are considered to be the origin of the trap sites. The trapping–detrapping process, which may be tuned by the electric field across the metal/oxide/graphene gate stack, could lead to the changing of the intrinsic electric property of graphene. This study promises to produce the complementary p- and n-type GFET for logic applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene

et al. 2022

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“…According to Kim's model, the carrier mobility of the device (µEF), contact resistance (RC), residual carrier concentration(n0) and such parameters can be derived from the following formula: [13][14][15][16] ICPSET-2022 Journal of Physics: Conference Series 2242 (2022) 012005…”

Section: Test Results and Discussionmentioning

confidence: 99%

Study on the Field-effect Carrier Transport of Epitaxial Graphene on SiC

Cao

Wei

Jin

et al. 2022

J. Phys.: Conf. Ser.

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We have studied the field-effect carrier transport of graphene on 4H silicon carbide substrate. In order to extract the electrical parameters, the top-gated field effect transistor has been fabricated. By fitting the measured results with Kim’s model, the field effect carrier mobility (µ) and the metal/graphene contact resistance (Rc) and the residual carrier concentration (n0) are derived to be 3382cm2/Vs, 2250Ω▪µm and 2.18×1013cm-2, respectively. It is noted that the large contact resistance did not affect the high field effect carrier mobility of our device. The high carrier mobility suggests that the SiC epitaxial graphene may be quite suitable for the future high speed electronic applications.

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“…Although GFET has emerged as a promising device for analog/RF applications, the contact resistance (R c ) embracing the phenomena arising at the interface between graphene and source/drain metal electrodes remains a major limiting factor that affects the electronic transport properties. [71][72][73][74][75][76][77][78][79][80] For RF electronic applications, it is a relevant issue with a strong impact on figures of merit such as the maximum frequency of oscillation (f max ), intrinsic cut-off frequency (f T ), and A v,i . [9,81,82] Despite the considerable number of experimental and theoretical studies, the origin of R c is still unclear owing to the multiple intrinsic and extrinsic factors affecting it, namely the nature of metals (chemisorbed or physisorbed), geometry of the contact (planar or edge), number of graphene layers, as well as impact of the fabrication process and bias.…”

Section: Metal-graphene Contact Resistancementioning

confidence: 99%

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors

et al. 2022

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In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Other set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-, self-heating-, and non-quasi static-effects, which could have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, we provide a perspective of the challenges during the scale up of the GFET modeling technology towards higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers.Received: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))

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The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adem.202100935.

Cited by 14 publications

References 49 publications

Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene

Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene

Study on the Field-effect Carrier Transport of Epitaxial Graphene on SiC

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors

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