Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

Abstract

Articles you may be interested inDiscrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantumwell structure by a time-resolved multimode scanning near-field optical microscopy Scanning near field optical microscopy ͑SNOM͒ was applied to study the carrier localization in single InGaN/GaN quantum well structures grown on nonpolar m-plane GaN substrates. Dual localization potential consisting of hundreds of nanometers-to micrometer-size areas as well as smaller localization centers were identified from the SNOM scans and near field photoluminescence spectral widths. The localization areas were found to align along the ͓0001͔ direction, which was attributed to partial strain relaxation at the monolayer steps.

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

“…Both planes are strongly suited to yield high-efficiency, low-droop LEDs. However, known issues with basal plane stacking faults [33], surface morphology [33], carrier localization and broadened emission [34], and indium uptake [35] on nonpolar motivate further examination of semipolar . The following sections discuss recent experimental results on semipolar .…”

Carrier dynamics and localization in AlInN/GaN heterostructures

“…The AlInN near-field spectra are broad, resembling that of the far-field. This shows that the near-field spectra are composed of multiple peaks originating from areas that are much smaller than the SNOM aperture diameter [12,13]. The map of the GaN peak intensity (Fig.…”

Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2

“…Additional XRD reciprocal space mappings of symmetric and asymmetric planes indicated fully pseudomorphic growth of the wells on the anisotropically strained GaN buffer. This results in in-plane compressive strain components e xx and e zz (corresponding to [11][12][13][14][15][16][17][18][19][20] and [0001] directions, respectively) for the wells ranging from À0.66% to À3.25% and from À0.81% to À3.15%, respectively, which are higher than the ones for InGaN pseudomorphically grown on an m-plane GaN substrate. 11 Photoluminescence (PL) spectra at temperatures between 10 K and 300 K were measured using a pulsed N 2 -laser (k exc ¼ 337.1 nm, I exc $ 200 kW/cm 2 ) and a continuous-wave semiconductor laser (k exc ¼ 405 nm, I exc $ 1 W/cm 2 ) as excitation sources.…”