Irregular spectral position of <i>E || c</i> component of polarized photoluminescence from <i>m</i>-plane InGaN/GaN multiple quantum wells grown on LiAlO2

Mauder, C.; Луценко, Е. В.; Rzheutski, M. V.; Reuters, B.; Zubialevich, Vitaly Z.; Pavlovskii, V. N.; Yablonskii, G. P.; Heuken, M.; Kalisch, H.; Vescan, A.

doi:10.1063/1.3667199

Cited by 6 publications

(7 citation statements)

References 22 publications

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“…However, limited size and high cost of the bulk GaN substrates act as barriers to mass production of LEDs with polarized emission. Furthermore, although the polarized light emissions have been also observed in MQWs with non- or semi-polar hetero-epitaxial structures 17,18 , the structures are highly defective. Thus, it will be very important to realize linearly polarized light emission with the commonly used c-plane InGaN/GaN MQWs on c-plane sapphire substrate to resolve these problems.…”

Section: Introductionmentioning

confidence: 99%

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Kim

Lee

et al. 2019

Sci Rep

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Highly polarized photoluminescence (PL) from c-plane InGaN/GaN multiple quantum wells (MQWs) grown on stripe-shaped cavity-engineered sapphire substrate (SCES) was realized. The polarization ratio was as high as 0.74 at room temperature. High-resolution X-ray reciprocal space mapping measurements revealed that the InGaN quantum wells on GaN/SCES template were under considerable anisotropic in-plane strain states of −1.178% and −1.921% along the directions perpendicular and parallel to the stripe-pattern, respectively. The anisotropic strain states were attributed to the anisotropic alignment of cavity-incorporated sapphire nano-membranes, which accommodated both anisotropic elastic relaxation in the InGaN quantum well plane as well as the graded elastic relaxation along the vertical direction in the GaN template adjacent to the InGaN/GaN MQWs. The partial strain relaxation in the InGaN wells also contributed to reduction of quantum confined Stark effect, resulting in four times higher PL intensity than InGaN/GaN MQWs on planar sapphire substrate. From theoretical calculations based on k∙p perturbation theory, it was found that fundamental origin of the polarized optical emission was strain-induced modification of valence band structures of the InGaN/GaN MQWs on the SCES. This study will allow us to realize light emitting diodes with highly polarized emission with conventional c-plane sapphire substrates by strain-induced valence band modification.

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Section: Introductionmentioning

confidence: 99%

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Kim

Lee

et al. 2019

Sci Rep

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“…The effect was considered in details in our previous work [4]. With temperature increase, ΔE PL rises and achieves saturation at a certain high temperature.…”

Section: Contributed Articlementioning

confidence: 97%

“…Indium content x In in InGaN QW layers was changed from 5% to 30% by variation of the MQW region growth temperature T MQW . The growth details can be found in our previous work [4]. Temperaturedependent photoluminescence (PL) spectra at different polarizations (E ⊥ c and E || c) were measured in a range from 10 K to 580 K. A pulsed N 2 laser (λ exc = 337.1 nm, I exc = 300 kW/cm 2 ) and a continuous-wave HeCd laser (λ exc = 325 nm, I exc = 1 W/cm 2 ) were used as excitation sources.…”

mentioning

confidence: 99%

Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO₂

Луценко

Rzheutski

Pavlovskii

et al. 2012

Phys. Status Solidi C

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Polarized photoluminescence (PL) of a series of m ‐plane InGaN/GaN multiple quantum well heterostructures (xIn = 5‐30%) was measured in a wide temperature range (T = 10‐580 K). A pronounced S‐shape behaviour of PL band position was observed for all samples which is an evidence of a high degree of localization of photogenerated carriers. From temperature dependences of the PL degree of polarization, the energy difference between the two highest valence subbands ΔE in InGaN was estimated to be increasing from ∼70 meV to ∼160 meV with rising indium content from 5% to 30%. The high‐temperature spectral difference between the polarized PL components was substantially lower than ΔE which is caused by imperfect polarization of optical transitions to different valence subbands. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Though there is no complete solution, so far, several efforts on the position and polarization control of QDs have been reported 8 , 9 . Additional polarization was reported at the nonpolar heterostructures caused by the in-plane anisotropy of the band structure, resulting in polarization of photo- and electro-luminescence 10 – 12 .…”

Section: Introductionmentioning

confidence: 97%

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

Park

Chan

Nuttall

et al. 2018

Sci Rep

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We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn’t show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%.

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Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2

Cited by 6 publications

References 22 publications

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO₂

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

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Irregular spectral position of E || c component of polarized photoluminescence from m-plane InGaN/GaN multiple quantum wells grown on LiAlO2

Cited by 6 publications

References 22 publications

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate

Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO2

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods

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Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO₂