Carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod

Abstract

Abstract:We made a theoretical study of the carrier distribution and electromechanical fields in a free piezoelectric semiconductor rod of crystals of class 6 mm. Simple analytical expressions for the carrier distribution, electric potential, electric field, electric displacement, mechanical displacement, stress, and strain were obtained from a 1D nonlinear model reduced from the 3D equations for piezoelectric semiconductors. The distribution and fields were found to be either symmetric or antisymmetric about the center of the rod. They are qualitatively the same for electrons and holes. Numerical calculations show that the carrier distribution and the fields are relatively strong near the ends of the rod than in its central part. They are sensitive to the value of the carrier density near the ends of the rod.

Model and performance analysis of non-uniform piezoelectric semiconductor nanofibers

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Impact of PN junction inhomogeneity on the piezoelectric fields of acoustic waves in piezo-semiconductive fibers

“…Here A is the area of the cross section, which is dependent of x 3 . 33 , 33 and 33 are the effective 𝑐 𝑒 𝜀 one-dimensional elastic, piezoelectric, and dielectric constants introduced by the one-dimensional stress relaxation condition [35], i.e., The isolated boundary condition at two ends x 3 = L require zero currents, which leads to J n 3 =J p 3 = 0 in Eq. ( 7), and .…”

Propagation of extensional waves in a piezoelectric semiconductor rod

“…32 The governing equations are the linear momentum equation, the charge equation of electrostatics, and the conservation of electrons and holes:…”

“…We performed a theoretical analysis using a one-dimensional model developed in our previous static analysis of a piezoelectric semiconductor rod. 32 An approximate solution was obtained showing a few nonlinear aspects of the wave.…”