Impact of PN junction inhomogeneity on the piezoelectric fields of acoustic waves in piezo-semiconductive fibers

Fang, Kai; Li, Nian; Liu, Dianzi; Qian, Zhenghua; Колесов, В. В.; Kuznetsova, I. E.

doi:10.1016/j.ultras.2021.106660

Cited by 13 publications

(2 citation statements)

References 36 publications

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“…It is found that the tensile-stress mode of the mechanically induced artificial potential barrier improves the performance of PN junctions by reconstructing the interface potential barrier and the compressive stress mode by stimulating strong interaction with the interface barrier. Fang et al established a linearized one-dimensional model for the PSC fiber to study the electromechanical field under a pair of applied end mechanical forces and reveal the piezotronic performance modulation in the non-uniform PSC PN junction [21]. It is indicated that the acoustoelectric fields in the space charge region of the non-uniform PSC PN junction are more sensitive to the applied mechanical forces compared with that of the uniform junction, especially for a heterogeneous PN junction.…”

Section: Introductionmentioning

confidence: 99%

Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Guo,

Wang,

et al. 2024

Mathematics

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With the fast development and miniaturization of acoustic and electric smart devices, micro and nanoscale piezoelectric semiconductor materials are gradually being used to manufacture information communication, energy conversion, and nondestructive testing technologies. As the core components of the above piezoelectric semiconductor devices, homo- and hetero-junctions have an evident influence on the propagation performance of high-frequency and short-wavelength elastic waves inside the bulk piezoelectric semiconductor materials. Based on the Gurtin–Murdoch theory, a theoretical model of interface effect originating from homo- and hetero-junctions is established to investigate the propagation properties of Love waves in a piezoelectric semiconductor semi-infinite medium considering the electrical open circuit (insulation) and short circuit (metalized ground) surface boundary conditions and biasing electric fields. Four interface characteristic lengths are introduced to describe the electrical imperfect interface of homo- and hetero-junctions, which are legitimately confirmed through comparisons of the dispersion and attenuation curves of Love waves. The influence of homo- and hetero-junctions on the dispersion and attenuation characteristics of Love waves are elaborated in detail. Numerical results show that the interface characteristic lengths are independent of the electrical surface boundary conditions, acceptor and donor concentrations, thickness of the upper piezoelectric semiconductor layer, and biasing electric fields in the piezoelectric semiconductor semi-infinite medium. Moreover, the propagation characteristics of Love waves can be manipulated by changing the biasing electric field parallel to the homo- and hetero-junctions. Since the high-frequency and short-wavelength Love wave is an important class of surface acoustic waves propagating in micro- and nano-scale piezoelectric semiconductor materials, the establishment of mathematical models and the revelation of physical mechanisms are fundamental to the analysis and optimization of the above piezoelectric semiconductor devices.

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Section: Introductionmentioning

confidence: 99%

Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Guo,

Wang,

et al. 2024

Mathematics

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“…Applying piecewise stresses, Fan et al [13] realized the barriers and wells in a piezoelectric semiconductor fiber, which enables us to manipulate the electrical properties with a new approach. More recently, Ren et al [14] , Fang et al [15][16] , and Xu et al [17] have proposed that the distributions of electro-elastic field quantities can also be adjusted through designing non-uniform profiles. Considering the PN junction between the p-type semiconductor and n-type semiconductor, Luo et al [18] and Guo et al [19] concluded the mechanism of the interaction between load and electric properties in a piezoelectric semiconductor fiber with the PN junction.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear analysis on electrical properties in a bended composite piezoelectric semiconductor beam

Zhao,

Jin,

Shao

et al. 2023

Appl. Math. Mech.-Engl. Ed.

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In this paper, the interactions between the transverse loads and the electrical field quantities are investigated based on the nonlinear constitutive relation. By considering a composite beam consisting of a piezoelectric semiconductor and elastic layers, the nonlinear model is established based on the phenomenological theory and Euler’s beam theory. Furthermore, an iteration procedure based on the differential quadrature method (DQM) is developed to solve the nonlinear governing equations. Before analysis, the convergence and correctness are surveyed. It is found that the convergence of the proposed iteration is fast. Then, the transverse pressure induced electrical field quantities are investigated in detail. From the calculated results, it can be found that the consideration of nonlinear constitutive relation is necessary for a beam undergoing a large load. Compared with the linear results, the consideration of the nonlinear constitutive relation breaks the symmetry for the electric potential, the electric field, and the perturbation carrier density, and has little influence on the electric displacement. Furthermore, the non-uniform pressures are considered. The results show that the distributions of the electric field quantities are sensitively altered. It indicates that the electrical properties can be manipulated with the design of different transverse loads. The conclusions in this paper could be the guidance on designing and manufacturing electronic devices accurately.

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Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers

Fang

Qian

et al. 2022

Appl. Math. Mech.-Engl. Ed.

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In this paper, we propose a specific two-layer model consisting of a functionally graded (FG) layer and a piezoelectric semiconductor (PS) layer. Based on the macroscopic theory of PS materials, the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated. The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series. Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer. In addition, by creating jump discontinuities in the material properties of the FG layer, potential barriers/wells can be produced in the middle of the fiber. Similarly, the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way, which offers a new choice for the design of PN junction based devices.

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Impact of PN junction inhomogeneity on the piezoelectric fields of acoustic waves in piezo-semiconductive fibers

Cited by 13 publications

References 36 publications

Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Nonlinear analysis on electrical properties in a bended composite piezoelectric semiconductor beam

Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers

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