Model and performance analysis of non-uniform piezoelectric semiconductor nanofibers

Fang, Kai; Li, Nian; Liu, Dianzi; Qian, Zhenghua; Kolesov, Vladimir; Kuznetsova, I. E.

doi:10.1016/j.apm.2021.12.009

Cited by 15 publications

(5 citation statements)

References 40 publications

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“…where Under the supposition of small deformation and the quasi-static electric field approximation, the constitutive equations of the upper PSC layer and lower PSC substrate are [3,4] σ…”

Section: Problem Formulation and Basic Equationsmentioning

confidence: 99%

“…Based on the plane strain assumption, the governing equations of the upper PSC layer and lower PSC substrate [3,4] are…”

Section: Problem Formulation and Basic Equationsmentioning

confidence: 99%

“…Linear partial differential equations can be used to mathematically describe the coupling relationship of the above physical quantities, including the linear constitutive and governing equations. Based on the classical partial differential solution theory, the wave motion physical quantities, such as stress, electric displacement, and carrier current density, can be solved accurately [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

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Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Guo,

Wang,

et al. 2024

Mathematics

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With the fast development and miniaturization of acoustic and electric smart devices, micro and nanoscale piezoelectric semiconductor materials are gradually being used to manufacture information communication, energy conversion, and nondestructive testing technologies. As the core components of the above piezoelectric semiconductor devices, homo- and hetero-junctions have an evident influence on the propagation performance of high-frequency and short-wavelength elastic waves inside the bulk piezoelectric semiconductor materials. Based on the Gurtin–Murdoch theory, a theoretical model of interface effect originating from homo- and hetero-junctions is established to investigate the propagation properties of Love waves in a piezoelectric semiconductor semi-infinite medium considering the electrical open circuit (insulation) and short circuit (metalized ground) surface boundary conditions and biasing electric fields. Four interface characteristic lengths are introduced to describe the electrical imperfect interface of homo- and hetero-junctions, which are legitimately confirmed through comparisons of the dispersion and attenuation curves of Love waves. The influence of homo- and hetero-junctions on the dispersion and attenuation characteristics of Love waves are elaborated in detail. Numerical results show that the interface characteristic lengths are independent of the electrical surface boundary conditions, acceptor and donor concentrations, thickness of the upper piezoelectric semiconductor layer, and biasing electric fields in the piezoelectric semiconductor semi-infinite medium. Moreover, the propagation characteristics of Love waves can be manipulated by changing the biasing electric field parallel to the homo- and hetero-junctions. Since the high-frequency and short-wavelength Love wave is an important class of surface acoustic waves propagating in micro- and nano-scale piezoelectric semiconductor materials, the establishment of mathematical models and the revelation of physical mechanisms are fundamental to the analysis and optimization of the above piezoelectric semiconductor devices.

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“…where Under the supposition of small deformation and the quasi-static electric field approximation, the constitutive equations of the upper PSC layer and lower PSC substrate are [3,4] σ…”

Section: Problem Formulation and Basic Equationsmentioning

confidence: 99%

“…Based on the plane strain assumption, the governing equations of the upper PSC layer and lower PSC substrate [3,4] are…”

Section: Problem Formulation and Basic Equationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Guo,

Wang,

et al. 2024

Mathematics

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“…Using the finite element method, Araneo et al simulated the axial 17 and transverse 18 deformation of tapered PS nanofibers and demonstrated that non-uniform strain leads to higher on-off ratios of devices. Fang et al 19 investigated the electromechanical properties of extensional non-uniform PS fibers using a macroscopic phenomenological theory. They proposed a power series expansion method a) Corresponding Author; Electronic mail: qianzh@nuaa.edu.cn to solve the differential equations with variable coefficients describing the field distributions and demonstrated that nonuniform fibers are more sensitive to external forces.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the laterally bent piezoelectric semiconductor fibers with variable cross sections

Fang

et al. 2023

Journal of Applied Physics

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Piezoelectric semiconductor (PS) materials have attracted much attention in recent years due to their unique properties. This paper explores the electromechanical coupling behavior of bent piezoelectric semiconductor fibers with non-uniform cross-sectional areas. The study uses the generalized differential quadrature method to numerically solve the field equations with variable coefficients derived from piezoelectric theory. The research examines the mechanical and electrical field distribution of bent variable cross-sectional fibers, comparing the performances of non-uniform fibers with different profiles. The study reveals that the variable cross-sectional profile of the fiber changes the characteristic of the uniform fiber’s electrical distribution along the axis, and it exhibits a more sensitive and stronger electrical response to the same external force. The research also shows that the concavity and convexity of the radius distribution function of the non-uniform fibers determine whether there are extreme points of surface potential. Finally, the study suggests that by designing extreme points of the PS fiber profile, surface potential extreme points can be artificially created at the same location. These results offer a theoretical direction for creating advanced piezoelectric semiconductor nanodevices and present novel insights into designing higher-efficiency nanogenerators and mechanical strain sensors in the future.

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“…Applying piecewise stresses, Fan et al [13] realized the barriers and wells in a piezoelectric semiconductor fiber, which enables us to manipulate the electrical properties with a new approach. More recently, Ren et al [14] , Fang et al [15][16] , and Xu et al [17] have proposed that the distributions of electro-elastic field quantities can also be adjusted through designing non-uniform profiles. Considering the PN junction between the p-type semiconductor and n-type semiconductor, Luo et al [18] and Guo et al [19] concluded the mechanism of the interaction between load and electric properties in a piezoelectric semiconductor fiber with the PN junction.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear analysis on electrical properties in a bended composite piezoelectric semiconductor beam

Zhao,

Jin,

Shao

et al. 2023

Appl. Math. Mech.-Engl. Ed.

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In this paper, the interactions between the transverse loads and the electrical field quantities are investigated based on the nonlinear constitutive relation. By considering a composite beam consisting of a piezoelectric semiconductor and elastic layers, the nonlinear model is established based on the phenomenological theory and Euler’s beam theory. Furthermore, an iteration procedure based on the differential quadrature method (DQM) is developed to solve the nonlinear governing equations. Before analysis, the convergence and correctness are surveyed. It is found that the convergence of the proposed iteration is fast. Then, the transverse pressure induced electrical field quantities are investigated in detail. From the calculated results, it can be found that the consideration of nonlinear constitutive relation is necessary for a beam undergoing a large load. Compared with the linear results, the consideration of the nonlinear constitutive relation breaks the symmetry for the electric potential, the electric field, and the perturbation carrier density, and has little influence on the electric displacement. Furthermore, the non-uniform pressures are considered. The results show that the distributions of the electric field quantities are sensitively altered. It indicates that the electrical properties can be manipulated with the design of different transverse loads. The conclusions in this paper could be the guidance on designing and manufacturing electronic devices accurately.

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Model and performance analysis of non-uniform piezoelectric semiconductor nanofibers

Cited by 15 publications

References 40 publications

Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Influence of Homo- and Hetero-Junctions on the Propagation Characteristics of Love Waves in a Piezoelectric Semiconductor Semi-Infinite Medium

Analysis of the laterally bent piezoelectric semiconductor fibers with variable cross sections

Nonlinear analysis on electrical properties in a bended composite piezoelectric semiconductor beam

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